| Structural and electrical characteristics of RF-sputtered HfO< sub> 2</sub> high-k based MOS capacitors PM Tirmali, AG Khairnar, BN Joshi, AM Mahajan Solid-State Electronics 62 (1), 44-47, 2011 | 89 | 2011 |
| Effect of post-deposition annealing temperature on RF-Sputtered HfO< sub> 2</sub> thin film for advanced CMOS technology AG Khairnar, AM Mahajan Solid State Sciences 15, 24-28, 2012 | 80* | 2012 |
| Sol–gel deposited ceria thin films as gate dielectric for CMOS technology AG Khairnar, AM Mahajan Bulletin of Materials Science 36 (2), 259-263, 2013 | 31 | 2013 |
| Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon AM Mahajan, AG Khairnar, BJ Thibeault Semiconductors Ôèçèêà è òåõíèêà ïîëóïðîâîäíèêîâ 48 (4), 2014 | 28 | 2014 |
| HfO2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment KS Agrawal, VS Patil, AG Khairnar, AM Mahajan Applied Surface Science 364, 747-751, 2016 | 21 | 2016 |
| Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge (100) prepared by PEALD VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan Materials Science in Semiconductor Processing 56, 277-281, 2016 | 18 | 2016 |
| High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates AM Mahajan, AG Khairnar, BJ Thibeault Silicon 8 (3), 345-350, 2016 | 17 | 2016 |
| Preparation of rare earth CeO2 thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors KS Agrawal, VS Patil, AG Khairnar, AM Mahajan Journal of Materials Science: Materials in Electronics 28, 12503-12508, 2017 | 12 | 2017 |
| Electrical properties of HfO2 high-k thin-film MOS capacitors for advanced CMOS technology AG Khairnar, LS Patil, RS Salunke, AM Mahajan Indian Journal of Physics 89 (11), 1177-1181, 2015 | 8 | 2015 |
| Symthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor AG Khairnar, YS Mhaisagar, AM Mahajan Æóðíàë íàíî-òà åëåêòðîííî¿ ô³çèêè, 03002-1-03002-3, 2013 | 6 | 2013 |
| Ninety percent drug utilization in patients of upper respiratory infections L Patil, A Khairnar Int. Res. J. Pharm 4 (6), 189-93, 2013 | 5 | 2013 |
| accepted in Semiconductors AM Mahajan, AG Khairnar, BJ Thibeault Springer) July, 2013 | 5 | 2013 |
| Pt-Ti/ALD-Al 2 O 3/p-Si MOS Capacitors for Future ULSI Technology AM Mahajan, AG Khairnar, BJ Thibeault J. Nano- Electron. Phys. 3 (1), 647-650, 2011 | 5 | 2011 |
| Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface VS Patil, KS Agrawal, AG Khairnar, BJ Thibeault, AM Mahajan Materials Research Bulletin 87, 208-213, 2017 | 4 | 2017 |
| Deposition and characterization of high k dielectric thin films for mos capacitors AG Khairnar North Maharashtra University Jalgaon, 0 | 4* | |
| Enhancement in mechanical properties of silica low-k thin films using wet chemical technique YS Mhaisagar, AS Gaikad, AG Khairnar, AM Mahajan Indian Journal of Pure & Applied Physics (IJPAP) 54 (7), 439-442, 2016 | 3 | 2016 |
| PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor AG Khairnar, VS Patil, KS Agrawal, RS Salunke, AM Mahajan Semiconductors 51, 131-133, 2017 | 1 | 2017 |
| Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate AG Khairnar, KS Agrawal, VS Patil, AM Mahajan Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | 1 | 2014 |
| Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium AG Khairnar, VS Patil, AM Mahajan Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | 1 | 2014 |
| Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure AG Khairnar, YS Mhaisagar, AM Mahajan J. Nano- Electron. Phys. 5 (2), 02009-1-02009-3, 2013 | 1 | 2013 |
Dr. Ashok M MahajanSenior Professor and Head, Department of Electronics, Director, SoPS, KBCNMU, JALGAONVerified email at nmu.ac.in
