The silicon vacancy in SiC E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son
Physica B: Condensed Matter 404 (22), 4354-4358, 2009
125 2009 Excitation properties of the divacancy in -SiC B Magnusson, NT Son, A Csóré, A Gällström, T Ohshima, A Gali, ...
Physical Review B 98 (19), 195202, 2018
64 2018 Identification and tunable optical coherent control of transition-metal spins in silicon carbide T Bosma, GJJ Lof, CM Gilardoni, OV Zwier, F Hendriks, B Magnusson, ...
npj Quantum Information 4 (1), 48, 2018
62 2018 Theory of neutral divacancy in SiC: a defect for spintronics A Gali, A Gällström, NT Son, E Janzén
Materials science forum 645, 395-397, 2010
51 2010 Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS) H Pedersen, S Leone, A Henry, V Darakchieva, P Carlsson, A Gällström, ...
physica status solidi (RRL)–Rapid Research Letters 2 (4), 188-190, 2008
36 2008 High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ...
Applied Physics Letters 92 (11), 2008
36 2008 Asymmetric split-vacancy defects in SiC polytypes: a combined theoretical and electron spin resonance study V Ivady, A Gällström, NT Son, E Janzén, A Gali
Physical review letters 107 (19), 195501, 2011
33 2011 Prominent defects in semi-insulating SiC substrates NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén
Physica B: Condensed Matter 401, 67-72, 2007
29 2007 Deep levels in iron doped n-and p-type 4H-SiC FC Beyer, CG Hemmingsson, S Leone, YC Lin, A Gällström, A Henry, ...
Journal of Applied Physics 110 (12), 2011
27 2011 Object recognition in forward looking sonar images using transfer learning LR Fuchs, A Gällström, J Folkesson
2018 IEEE/OES Autonomous Underwater Vehicle Workshop (AUV), 1-6, 2018
26 2018 Deep levels in tungsten doped n-type 3C–SiC FC Beyer, CG Hemmingsson, A Gällström, S Leone, H Pedersen, A Henry, ...
Applied physics letters 98 (15), 2011
23 2011 Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC A Gällström, B Magnusson, FC Beyer, A Gali, NT Son, S Leone, IG Ivanov, ...
Physica B: Condensed Matter 407 (10), 1462-1466, 2012
19 2012 Electron paramagnetic resonance and theoretical studies of Nb in 4H-and 6H-SiC N Tien Son, X Thang Trinh, A Gällström, S Leone, O Kordina, E Janzén, ...
Journal of Applied Physics 112 (8), 2012
16 2012 Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén
Applied Physics Letters 91 (20), 2007
14 2007 Optical identification of Mo related deep level defect in 4H and 6H SiC A Gällström, B Magnusson, E Janzén
Materials Science Forum 615, 405-408, 2009
13 2009 Deep learning based technique for enhanced sonar imaging L Rixon Fuchs, C Larsson, A Gällström
5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019
10 2019 Optical properties and Zeeman spectroscopy of niobium in silicon carbide A Gällström, B Magnusson, S Leone, O Kordina, NT Son, V Ivády, A Gali, ...
Physical Review B 92 (7), 075207, 2015
9 2015 Enhanced sonar image resolution using compressive sensing modelling A Gällström, L Rixon Fuchs, C Larsson
5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019
6 2019 Investigation of Mo defects in 4H-SiC by means of density functional theory A Csóré, A Gällström, E Janzén, Á Gali
Materials Science Forum 858, 261-264, 2016
6 2016 Optical characterization of deep level defects in SiC A Gällström
Linköping University Electronic Press, 2015
5 2015