Mechanisms of charge transport in anisotype n-TiO2/p-CdTe heterojunctions VV Brus, MI Ilashchuk, ZD Kovalyuk, PD Maryanchuk, KS Ulyanytsky, ... Semiconductors 45, 1077-1081, 2011 | 34 | 2011 |
Charge collection properties of a CdTe Schottky diode for x-and γ-rays detectors LA Kosyachenko, OL Maslyanchuk, VA Gnatyuk, C Lambropoulos, ... Semiconductor science and technology 23 (7), 075024, 2008 | 33 | 2008 |
Low-temperature effects of the resonance electron states on the impurities of transition elements in kinetic, magnetic and acoustic properties of semiconductors … VI Okulov, TE Govorkova, VV Gudkov, IV Zhevstovskikh, AV Korolev, ... Fizika Nizkikh Temperatur 33, 2007 | 32* | 2007 |
Piezoresistance of cadmium antimonide KD Tovstyuk, DM Bercha, ZV Pankevich, IM Rarenko physica status solidi (b) 13 (1), 207-214, 1966 | 32 | 1966 |
Spectroscopic evidence of spinel phase clustering in solid solutions Hg1− xCrxSe (0.03≤ x≤ 0.1) K Lamonova, I Ivanchenko, S Orel, S Paranchich, V Tkach, E Zhitlukhina, ... Journal of Physics: Condensed Matter 21 (4), 045603, 2009 | 27 | 2009 |
ZnMnO diluted magnetic semiconductor nanoparticles: Synthesis by laser ablation in liquids, optical and magneto-optical properties AI Savchuk, A Perrone, A Lorusso, ID Stolyarchuk, OA Savchuk, ... Applied Surface Science 302, 205-208, 2014 | 26 | 2014 |
Получение и использование оптимизированных материалов из антимонида кадмия АА Ащеулов, НК Воронка, СФ Маренкин, ИМ Раренко Неорганичекие материалы 12 (9), 1049-1060, 1996 | 26 | 1996 |
Optical properties of (3HgSe) 0.5 (In2Se3) 0.5 crystals doped with Mn or Fe IP Koziarskyi, PD Marianchuk, EV Maistruk Ukrainian journal of physical optics, 137-142, 2011 | 23 | 2011 |
Magnetic, electrical, and optical properties of (HgS)1.5(Al2S3)0.5 and (HgS)1.5(In2S3)0.5 crystals PD Maryanchuk, IP Koziarskyi Inorganic Materials 48, 655-661, 2012 | 22 | 2012 |
Growth and characterization of high-resistivity CdTe DV Korbutyak, SG Krylyuk, PM Tkachuk, VI Tkachuk, ND Korbutjak, ... Journal of crystal growth 197 (3), 659-662, 1999 | 22 | 1999 |
Experimental study of the manifestations of resonance scattering of conduction electrons by transition elements impurities in mercury selenide VI Okulov, AV Gergert, TE Govorkova, AV Korolyov, AT Lonchakov, ... Fizika Nizkikh Temperatur 31 (10), 1143-1152, 2005 | 21 | 2005 |
Hg3In2Te6‐based photodiodes for fiber optic communication LA Kosyachenko, IS Kabanova, VM Sklyarchuk, OF Sklyarchuk, ... physica status solidi (a) 206 (2), 351-355, 2009 | 20 | 2009 |
Synthesis route and optical characterization of CdS: Mn/polyvinyl alcohol nanocomposite VI Fediv, GY Rudko, AI Savchuk, EG Gule, AG Voloshchuk | 19 | 2014 |
New approach to synthesis of semimagnetic semiconductor nanoparticles AI Savchuk, VI Fediv, AG Voloshchuk, TA Savchuk, YY Bacherikov, ... Materials Science and Engineering: C 26 (5-7), 809-812, 2006 | 19 | 2006 |
High‐temperature defect study of tellurium‐enriched CdTe: In R Grill, P Fochuk, J Franc, B Nahlovskyy, P Höschl, P Moravec, ... physica status solidi (b) 243 (4), 787-793, 2006 | 19 | 2006 |
Physical properties of Hg1 − x − y Cd x EuySe crystals TT Kovalyuk, PD Maryanchuk, EV Maistruk, IP Koziarskyi Inorganic Materials 50, 241-245, 2014 | 18 | 2014 |
Conductivity mechanism of CdZnTe, CdMnTe and CdHgTe single crystals LA Kosyachenko, OL Maslyanchuk, IM Rarenko, VM Sklyarchuk physica status solidi (c) 1 (4), 925-928, 2004 | 18 | 2004 |
Interference IR filters on CdSb monocrystal substrates SG Dremluzhenko, LI Konopatseva, SM Kulikovskaya, YP Stetsko, ... Fourth International Conference on Material Science and Material Properties …, 1999 | 18 | 1999 |
Низкотемпературные эффекты резонансных электронных состояний на примесях переходных элементов в кинетических, магнитных и акустических свойствах полупроводников ВИ Окулов, ТЕ Говоркова, ВВ Гудков, ИВ Жевстовских, АВ Королев, ... Физика низких температур, 2007 | 17 | 2007 |
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions LA Kosyachenko, IM Rarenko, S Weiguo, LZ Xiong Solid-State Electronics 44 (7), 1197-1202, 2000 | 17 | 2000 |