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Jay Mody
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Evolution of metastable phases in silicon during nanoindentation: mechanism analysis and experimental verification
K Mylvaganam, LC Zhang, P Eyben, J Mody, W Vandervorst
Nanotechnology 20 (30), 305705, 2009
1332009
Atom-probe for FinFET dopant characterization
AK Kambham, J Mody, M Gilbert, S Koelling, W Vandervorst
Ultramicroscopy 111 (6), 535-539, 2011
652011
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
J Mody, R Duffy, P Eyben, J Goossens, A Moussa, W Polspoel, ...
Journal of Vacuum Science & Technology B 28 (1), C1H5-C1H13, 2010
572010
Experimental studies of dose retention and activation in FinFet-based structures
J Mody, R Duffy, P Eyben, J Goossens, A Moussa, W Polspoel, ...
Proceedings of the International Workshop on INSIGHT in Semiconductor Device …, 2009
57*2009
Observation of diameter dependent carrier distribution in nanowire-based transistors
A Schulze, T Hantschel, P Eyben, AS Verhulst, R Rooyackers, ...
Nanotechnology 22 (18), 185701, 2011
512011
Analysis and modeling of the high vacuum scanning spreading resistance microscopy nanocontact on silicon
P Eyben, F Clemente, K Vanstreels, G Pourtois, T Clarysse, E Duriau, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2010
492010
Conformal doping of FINFETs: A fabrication and metrology challenge
W Vandervorst, JL Everaert, E Rosseel, M Jurczak, T Hoffman, P Eyben, ...
AIP Conference Proceedings 1066 (1), 449-456, 2008
372008
Dopant/carrier profiling for 3D‐structures
W Vandervorst, A Schulze, AK Kambham, J Mody, M Gilbert, P Eyben
physica status solidi (c) 11 (1), 121-129, 2014
352014
Fundamentals of picoscience
KD Sattler
CRC Press, 2013
332013
Fundamentals of picoscience
KD Sattler
CRC Press, 2013
332013
Fundamentals of picoscience
KD Sattler
CRC Press, 2013
332013
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
J Mody, G Zschaetzsch, S Koelling, A De Keersgieter, G Eneman, ...
2011 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2011
252011
Two-dimensional carrier mapping at the nanometer-scale on 32 nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy
P Eyben, T Clarysse, J Mody, A Nazir, A Schulze, T Hantschel, ...
Solid-state electronics 71, 69-73, 2012
212012
Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
J Mody, AK Kambham, G Zschaetzsch, P Schatzer, T Chiarella, N Collaert, ...
2010 Symposium on VLSI Technology, 195-196, 2010
212010
Physical degradation of gate dielectrics induced by local electrical stress using conductive atomic force microscopy
W Polspoel, P Favia, J Mody, H Bender, W Vandervorst
Journal of applied physics 106 (2), 2009
202009
Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy
P Eyben, J Mody, SC Vemula, W Vandervorst
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
162008
Nanosecond laser anneal for BEOL performance boost in advanced FinFETs
RTP Lee, N Petrov, J Kassim, M Gribelyuk, J Yang, L Cao, KB Yeap, ...
2018 IEEE Symposium on VLSI Technology, 61-62, 2018
152018
High performance n-MOS finFET by damage-free, conformal extension doping
G Zschaetzsch, Y Sasaki, S Hayashi, M Togo, T Chiarella, AK Kambham, ...
2011 International Electron Devices Meeting, 35.6. 1-35.6. 4, 2011
142011
Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures
J Mody, P Eyben, E Augendre, O Richard, W Vandervorst
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
142008
Atom probe tomography for 3D-dopant analysis in FinFET devices
AK Kambham, G Zschaetzsch, Y Sasaki, M Togo, N Horiguchi, J Mody, ...
2012 Symposium on VLSI Technology (VLSIT), 77-78, 2012
92012
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Articles 1–20