|Extended performance GeSn/Si(100) photodetectors for full spectral range telecommunication applications|
J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis
Applied physics letters 95 (13), 133506, 2009
|Room temperature continuous-wave operation of 1.3 μm GaAsP/GaAs/GaAsSb VCSELs grown on GaAs|
S Johnson, S Chaparro, N Samal, P Dowd, SQ Yu, JB Wang, K Shiralagi, ...
2002 28TH European Conference on Optical Communication 1, 1-2, 2002
|Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence|
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
|An optically pumped 2.5 μm GeSn laser on Si operating at 110 K|
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
|Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates|
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
|Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection|
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
|Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx|
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
|Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K|
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACS Photonics 5 (3), 827-833, 2017
|Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications|
A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ...
Journal of electronic materials 43 (4), 938-946, 2014
|Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system|
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711-720, 2014
|Group IV Photonics: driving integrated optoelectronics|
R Soref, D Buca, SQ Yu
optics and photonics news 27 (1), 32-39, 2016
|Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n …|
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
AIP Advances 3 (7), 072112, 2013
|GaAsSb/GaAs band alignment evaluation for long-wave photonic applications|
SR Johnson, CZ Guo, S Chaparro, YG Sadofyev, J Wang, Y Cao, ...
Journal of crystal growth 251 (1-4), 521-525, 2003
|Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff|
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
|Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection|
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
|A semi-analytical model for semiconductor solar cells|
D Ding, SR Johnson, SQ Yu, SN Wu, YH Zhang
Journal of Applied Physics 110 (12), 123104, 2011
|Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics|
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
| photoconductor structures at : From advanced materials to prototype devices|
R Roucka, J Xie, J Kouvetakis, J Mathews, V D’Costa, J Menendez, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
|Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas|
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
|Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications|
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016