Plasmon-enhanced below bandgap photoconductive terahertz generation and detection A Jooshesh, V Bahrami-Yekta, J Zhang, T Tiedje, TE Darcie, R Gordon
Nano letters 15 (12), 8306-8310, 2015
77 2015 Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8% M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ...
Journal of Applied Physics 116 (22), 2014
72 2014 Nanoplasmonics enhanced terahertz sources A Jooshesh, L Smith, M Masnadi-Shirazi, V Bahrami-Yekta, T Tiedje, ...
Optics express 22 (23), 27992-28001, 2014
72 2014 Deep level defects in n-type GaAsBi and GaAs grown at low temperatures PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ...
Journal of Applied Physics 113 (13), 2013
51 2013 Plasmonic antireflection coating for photoconductive terahertz generation F Fesharaki, A Jooshesh, V Bahrami-Yekta, M Mahtab, T Tiedje, ...
ACS photonics 4 (6), 1350-1354, 2017
41 2017 Limiting efficiency of indoor silicon photovoltaic devices V Bahrami-Yekta, T Tiedje
Optics express 26 (22), 28238-28248, 2018
36 2018 Plasmon-enhanced LT-GaAs/AlAs heterostructure photoconductive antennas for sub-bandgap terahertz generation A Jooshesh, F Fesharaki, V Bahrami-Yekta, M Mahtab, T Tiedje, ...
Optics express 25 (18), 22140-22148, 2017
31 2017 MBE growth optimization for GaAs1− xBix and dependence of photoluminescence on growth temperature V Bahrami-Yekta, T Tiedje, M Masnadi-Shirazi
Semiconductor Science and Technology 30 (9), 094007, 2015
31 2015 Complex dielectric function of as a function of Bi content M Mahtab, R Synowicki, V Bahrami-Yekta, LC Bannow, SW Koch, ...
Physical Review Materials 3 (5), 054601, 2019
18 2019 Raman and AFM studies on nominally undoped, p-and n-type GaAsBi alloys A Erol, E Akalin, K Kara, M Aslan, V Bahrami-Yekta, RB Lewis, T Tiedje
Journal of Alloys and Compounds 722, 339-343, 2017
18 2017 Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films P Wu, T Tiedje, H Alimohammadi, V Bahrami-Yekta, M Masnadi-Shirazi, ...
Semiconductor Science and Technology 31 (10), 10LT01, 2016
18 2016 Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy M Beaudoin, RB Lewis, JJ Andrews, V Bahrami-Yekta, M Masnadi-Shirazi, ...
Journal of Crystal Growth 425, 245-249, 2015
16 2015 Defect energy levels in p-type GaAsBi and GaAs grown by MBE at low temperatures PM Mooney, MC Tarun, V Bahrami-Yekta, T Tiedje, RB Lewis, ...
Semiconductor Science and Technology 31 (6), 065007, 2016
12 2016 Design considerations to improve high temperature characteristics of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers VB Yekta, H Kaatuzian
Optik 122 (6), 514-519, 2011
11 2011 Simulationand Temperature Characteristics Improvement of 1.3 μm AlGaInAs Multiple Quantum Well Laser VB Yekta, H Kaatuzian
Int. J. Opt. and Appl 4 (2), 46-53, 2014
10 2014 Closed-cycle cooling of cryopanels in molecular beam epitaxy RB Lewis, V Bahrami-Yekta, MJ Patel, T Tiedje, M Masnadi-Shirazi
Journal of Vacuum Science & Technology B 32 (2), 2014
6 2014 Closed cycle chiller as a low cost alternative to liquid nitrogen in molecular beam epitaxy RB Lewis, JA Mackenzie, T Tiedje, DA Beaton, M Masnadi-Shirazi, ...
Journal of Vacuum Science & Technology B 31 (3), 2013
6 2013 Erratum:“Deep level defects in n-type GaAsBi and GaAs grown at low temperatures”[J. Appl. Phys. 113, 133708 (2013)] PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ...
Journal of Applied Physics 117 (1), 2015
5 2015 A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers VB Yekta, H Kaatuzian
Communications in Theoretical Physics 54 (3), 529, 2010
4 2010 Optimization of growth conditions of GaAs1-xBix alloys for laser applications V Bahrami Yekta
1 2016