| Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions MC Sulzbach, S Estandía, X Long, J Lyu, N Dix, J Gàzquez, MF Chisholm, ... Advanced Electronic Materials 6 (1), 1900852, 2020 | 55 | 2020 |
| Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices MC Sulzbach, S Estandía, J Gàzquez, F Sánchez, I Fina, J Fontcuberta Advanced Functional Materials, 2002638, 2020 | 47 | 2020 |
| Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions M Cervo Sulzbach, H Tan, S Estandía, J Gàzquez, F Sánchez, I Fina, ... ACS Applied Electronic Materials, 2021 | 43 | 2021 |
| Synergetic electronic and ionic contributions to electroresistance in ferroelectric capacitors M Qian, I Fina, MC Sulzbach, F Sánchez, J Fontcuberta Advanced Electronic Materials 5 (3), 1800646, 2019 | 18 | 2019 |
| Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling MC Sulzbach, FF Selau, H Trombini, PL Grande, GG Marmitt, LG Pereira, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | | 2019 |
| Synthesis and characterization of TiO2 resistive memories through ion beam analysis MC Sulzbach Universidade Federal do Rio Grande do Sul, 2017 | | 2017 |
