| Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure PA Belevskiĭ, MN Vinoslavskiĭ, VN Poroshin, IV Stroganova Semiconductors 42, 589-592, 2008 | 6 | 2008 |
| High-field autosolitons in photogenerated electron-hole plasma in p-Si M Vinoslavskii, A Kravchenko, V Annin Journal of Physics: Condensed Matter 13 (50), 11623, 2001 | 5 | 2001 |
| Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells MM Vinoslavskii, PA Belevskii, VM Poroshin, OS Pilipchuk, VO Kochelap Semiconductor physics, quantum electronics & optoelectronics, 256-262, 2018 | 3 | 2018 |
| Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions PA Belevskii, MN Vinoslavkii, VN Poroshin, NV Baidus, BN Zvonkov Semiconductors 48, 625-629, 2014 | 2 | 2014 |
| High-field autosolitons in an electron-hole plasma in p-Ge MN Vinoslavskii, AV Kravchenko Journal of Experimental and Theoretical Physics 97, 162-173, 2003 | 2 | 2003 |
| Autosolitons in electron-hole plasma in p-Ge MN Vinoslavskiĭ, PA Belevskii, AV Kravchenko Journal of Experimental and Theoretical Physics 102, 417-430, 2006 | | 2006 |
| Emission from hot charge carriers during the formation of high-field autosolitons in electron-hole plasma in n-Ge MN Vinoslavskii, AV Kravchenko Semiconductors 35, 377-383, 2001 | | 2001 |
