John L Lyons
John L Lyons
Center for Computational Materials Science, Naval Research Laboratory
Подтвержден адрес электронной почты в домене nrl.navy.mil - Главная страница
Название
Процитировано
Процитировано
Год
Carbon impurities and the yellow luminescence in GaN
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 97, 152108, 2010
5552010
Bright triplet excitons in caesium lead halide perovskites
MA Becker, R Vaxenburg, G Nedelcu, PC Sercel, A Shabaev, MJ Mehl, ...
Nature 553 (7687), 189-193, 2018
4402018
Why nitrogen cannot lead to p-type conductivity in ZnO
JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 95, 252105, 2009
4062009
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
JL Lyons, A Janotti, CG Van de Walle
Physical Review B 89 (3), 035204, 2014
2952014
Shallow versus deep nature of Mg acceptors in nitride semiconductors
J Lyons, A Janotti, C G Van de Walle
Physical Review Letters 108, 156403, 2012
2222012
First-principles calculations of luminescence spectrum line shapes for defects in semiconductors: the example of GaN and ZnO
A Alkauskas, JL Lyons, D Steiauf, CG Van de Walle
Physical review letters 109 (26), 267401, 2012
1372012
Computationally predicted energies and properties of defects in GaN
JL Lyons, CG Van de Walle
NPJ Computational Materials 3 (1), 1-10, 2017
1172017
First‐principles theory of acceptors in nitride semiconductors
JL Lyons, A Alkauskas, A Janotti, CG Van de Walle
physica status solidi (b) 252 (5), 900-908, 2015
922015
Hybrid functional calculations of D X centers in AlN and GaN
L Gordon, JL Lyons, A Janotti, CG Van de Walle
Physical Review B 89 (8), 085204, 2014
912014
Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices
M Choi, JL Lyons, A Janotti, CG Van de Walle
Applied Physics Letters 102 (14), 142902, 2013
882013
Controlling the conductivity of InN
CG Van de Walle, JL Lyons, A Janotti
physica status solidi (a) 207 (5), 1024-1036, 2010
882010
Role of Si and Ge as impurities in ZnO
JL Lyons, A Janotti, CG Van de Walle
Physical Review B 80 (20), 205113, 2009
782009
The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2
JL Lyons, A Janotti, CG Van de Walle
Microelectronic Engineering, 2011
772011
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
CE Dreyer, A Alkauskas, JL Lyons, JS Speck, CG Van de Walle
Applied Physics Letters 108 (14), 141101, 2016
722016
A survey of acceptor dopants for β-Ga2O3
JL Lyons
Semiconductor Science and Technology 33 (5), 05LT02, 2018
652018
Review—Theory and Characterization of Doping and Defects in β-Ga2O3
MJ Tadjer, JL Lyons, N Nepal, JA Freitas Jr, AD Koehler, GM Foster
ECS Journal of Solid State Science and Technology 8 (7), Q3187, 2019
57*2019
First-principles characterization of native-defect-related optical transitions in ZnO
JL Lyons, JB Varley, D Steiauf, A Janotti, CG Van de Walle
Journal of Applied Physics 122 (3), 035704, 2017
542017
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors
JL Lyons, A Janotti, CG Van de Walle
Journal of Applied Physics 115 (1), 012014, 2014
542014
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
A Alkauskas, CE Dreyer, JL Lyons, CG Van de Walle
Physical Review B 93 (20), 201304, 2016
502016
Band alignments and polarization properties of BN polymorphs
CE Dreyer, JL Lyons, A Janotti, CG Van de Walle
Applied Physics Express 7 (3), 031001, 2014
492014
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Статьи 1–20