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Andrea Parisini
Andrea Parisini
CNR - IMM Sezione di Bologna
Подтвержден адрес электронной почты в домене bo.imm.cnr.it
Название
Процитировано
Процитировано
Год
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S Solmi, A Parisini, R Angelucci, A Armigliato, D Nobili, L Moro
Physical Review B 53 (12), 7836, 1996
1641996
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
D Nobili, S Solmi, A Parisini, M Derdour, A Armigliato, L Moro
Physical Review B 49 (4), 2477, 1994
1231994
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
1052017
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials chemistry and physics 205, 502-507, 2018
1022018
Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion
L Jin, G Sirigu, X Tong, A Camellini, A Parisini, G Nicotra, C Spinella, ...
Nano Energy 30, 531-541, 2016
922016
Wet Adsorption of a Luminescent EuIII complex on Carbon Nanotubes Sidewalls
G Accorsi, N Armaroli, A Parisini, M Meneghetti, R Marega, M Prato, ...
Advanced functional materials 17 (15), 2975-2982, 2007
792007
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
A Parisini, A Bourret, A Armigliato, M Servidori, S Solmi, R Fabbri, ...
Journal of applied physics 67 (5), 2320-2332, 1990
771990
Optical absorption near the fundamental absorption edge in GaSb
C Ghezzi, R Magnanini, A Parisini, B Rotelli, L Tarricone, A Bosacchi, ...
Physical Review B 52 (3), 1463, 1995
691995
Dual emission in asymmetric “giant” PbS/CdS/CdS core/shell/shell quantum dots
H Zhao, G Sirigu, A Parisini, A Camellini, G Nicotra, F Rosei, V Morandi, ...
Nanoscale 8 (7), 4217-4226, 2016
662016
Gas sensors for air quality monitoring: realisation and characterisation of undoped and noble metal-doped SnO2 thin sensing films deposited by the pulsed laser ablation
S Nicoletti, L Dori, GC Cardinali, A Parisini
Sensors and Actuators B: Chemical 60 (2-3), 90-96, 1999
651999
Permeated porous silicon for hydrocarbon sensor fabrication
R Angelucci, A Poggi, L Dori, GC Cardinali, A Parisini, A Tagliani, ...
Sensors and Actuators A: Physical 74 (1-3), 95-99, 1999
641999
Cap removal and shortening of double-walled and very-thin multi-walled carbon nanotubes under mild oxidative conditions
R Marega, G Accorsi, M Meneghetti, A Parisini, M Prato, D Bonifazi
Carbon 47 (3), 675-682, 2009
602009
The electronic structure of ε-Ga2O3
M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ...
APL Materials 7 (2), 2019
592019
Arsenic uphill diffusion during shallow junction formation
M Ferri, S Solmi, A Parisini, M Bersani, D Giubertoni, M Barozzi
Journal of Applied Physics 99 (11), 2006
572006
Investigation on indium diffusion in silicon
S Solmi, A Parisini, M Bersani, D Giubertoni, V Soncini, G Carnevale, ...
Journal of Applied Physics 92 (3), 1361-1366, 2002
572002
Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon
JL Allain, JR Regnard, A Bourret, A Parisini, A Armigliato, G Tourillon, ...
Physical Review B 46 (15), 9434, 1992
561992
Influence of electron-beam parameters on the radiation-induced formation of graphitic onions
G Lulli, A Parisini, G Mattei
Ultramicroscopy 60 (2), 187-194, 1995
541995
Si and Sn doping of ε-Ga2O3 layers
A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ...
APL Materials 7 (3), 2019
522019
Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV
R Ferrini, G Guizzetti, M Patrini, A Parisini, L Tarricone, B Valenti
The European Physical Journal B-Condensed Matter and Complex Systems 27 (4 …, 2002
492002
Experimental evidence of delocalization in correlated disorder superlattices
V Bellani, E Diez, A Parisini, L Tarricone, R Hey, GB Parravicini, ...
Physica E: Low-dimensional Systems and Nanostructures 7 (3-4), 823-826, 2000
442000
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