| The effect of Sn impurity on the optical and structural properties of thin silicon films VV Voitovych, VB Neimash, NN Krasko, AG Kolosiuk, VY Povarchuk, ... Semiconductors 45, 1281-1285, 2011 | 33 | 2011 |
| The effect of electron irradiation on the electrical properties of reduced graphene oxide paper OO Voitsihovska, RM Rudenko, VY Povarchuk, AA Abakumov, IB Bychko, ... Materials letters 236, 334-336, 2019 | 19 | 2019 |
| NO 3 2− and CO 2 − centers in synthetic hydroxyapatite: Features of the formation under γ- and UV-irradiations NP Baran, IP Vorona, SS Ishchenko, VV Nosenko, IV Zatovskii, ... Physics of the Solid State 53, 1891-1894, 2011 | 19 | 2011 |
| A protective role of HSP90 chaperone in gamma-irradiated Arabidopsis thaliana seeds L Kozeko, O Talalaiev, V Neimash, V Povarchuk Life sciences in space research 6, 51-58, 2015 | 16 | 2015 |
| NO 3 2- centers in synthetic hydroxyapatite IP Vorona, SS Ishchenko, NP Baran, VV Rudko, IV Zatovskiĭ, ... Physics of the Solid State 52, 2364-2368, 2010 | 15 | 2010 |
| CO 2 − radicals in synthetic hydroxyapatite IP Vorona, NP Baran, SS Ishchenko, VV Rudko, LS Chumakova, ... Physics of the Solid State 50, 1852-1856, 2008 | 12 | 2008 |
| Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices VV Voitovych, RM Rudenko, AG Kolosiuk, MM Krasko, VO Juhimchuk, ... Semiconductors 48, 73-76, 2014 | 10 | 2014 |
| Effect of pre-annealing on NO32-centers in synthetic hydroxyapatite VV Nosenko, IP Vorona, SS Ishchenko, NP Baran, IV Zatovsky, ... Radiation measurements 47 (10), 970-973, 2012 | 10 | 2012 |
| Radiation-induced defects in annealed carbonate-containing hydroxyapatite IP Vorona, SS Ishchenko, NP Baran, VV Nosenko, IV Zatovskii, ... Physics of the Solid State 55, 2543-2548, 2013 | 8 | 2013 |
| Formation of silver nanoparticles in PVA-PEG hydrogel under electron irradiation VB Neimash, HD Kupianskyi, IV Olkhovyk, VI Styopkin, PM Lytvynchuk, ... Ukrainian journal of physics 64 (1), 41-41, 2019 | 5 | 2019 |
| Influence of γ− irradiation on Si− Ge whiskers properties AA Druzhinin, IP Ostrovskii, M Khoverko Yu, VM Tsmots, V Pavlovskyy Yu, ... Physics and chemistry of solid state 11 (1), 89-92, 2010 | 5 | 2010 |
| Radiation damage of carrier lifetime and conductivity in Sn and Pb doped n-Si M Kras' ko, A Kraitchinskii, A Kolosiuk, V Voitovych, R Rudenko, ... Solid State Phenomena 205, 323-328, 2014 | 4 | 2014 |
| Dielectric and electrical properties of reduced graphene oxide paper after electron irradiation R Rudenko, O Voitsihovska, A Abakumov, I Bychko, V Povarchuk, ... Low Temperature Physics 48 (10), 832-839, 2022 | 3 | 2022 |
| Lifetime Control in Irradiated and Annealed Cz n‐Si: Role of Divacancy‐Oxygen Defects M Kras' ko, A Kolosiuk, V Voitovych, V Povarchuk physica status solidi (a) 216 (17), 1900290, 2019 | 3 | 2019 |
| Physical properties of radiation-crosslinked polyvinyl alcohol–polyethylene glycol hydrogels from the viewpoint of their application as medical dressings VB Neimash, HD Kupianskyi, IV Olkhovyk, VY Povarchuk, IS Roguts’kyi Ukrainian journal of physics 62 (5), 402-402, 2017 | 3 | 2017 |
| Effect of tin on structural transformations in the thin-film silicon suboxide matrix VV Voitovych, RM Rudenko, VO Yuchymchuk, MV Voitovych, MM Krasko, ... Ukrainian journal of physics, 980-986, 2016 | 3 | 2016 |
| Behavior of hydrogen during crystallization of thin silicon films doped with tin RM Rudenko, MM Kras’ko, VV Voitovych, AG Kolosyuk, VY Povarchuk, ... Ukrainian journal of physics, 1165-1170, 2013 | 3 | 2013 |
| Effect of electron and gamma-radiations on the structure of Fe-Si-B amorphous alloys; Vpliv elektronnogo yi gamma-opromyinennya na strukturu amorfnikh splavyiv Fe-Si-B VY Povarchuk, VB Nejmash, AM Krajchins' kij, VK Nosenko, VV Maslov, ... Ukrayins' kij Fyizichnij Zhurnal (Kyiv) 53, 2008 | 3 | 2008 |
| Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness M Kras' ko, A Kolosiuk, V Voitovych, V Povarchuk physica status solidi (a) 218 (23), 2100209, 2021 | 2 | 2021 |
| Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si MM Kras’ ko, AG Kolosiuk, VB Neimash, VY Povarchuk, IS Roguts’ kyi, ... Journal of Materials Research 36, 1646-1656, 2021 | 2 | 2021 |
