| Molecular beam epitaxial growth of GaAs on Si (211) PN Uppal, H Kroemer Journal of applied physics 58 (6), 2195-2203, 1985 | 175 | 1985 |
| Comparison of HgCdTe and quantum-well infrared photodetector dual-band focal plane arrays AC Goldberg, SW Kennerly, JW Little, TA Shafer, CL Mears, HF Schaake, ... Optical engineering 42 (1), 30-46, 2003 | 85* | 2003 |
| High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs DM Gill, BC Kane, SP Svensson, DW Tu, PN Uppal, NE Byer IEEE Electron Device Letters 17 (7), 328-330, 1996 | 75 | 1996 |
| Dual-band QWIP MWIR/LWIR focal plane array test results AC Goldberg, T Fischer, SW Kennerly, SCH Wang, M Sundaram, ... Infrared Detectors and Focal Plane Arrays VI 4028, 276-287, 2000 | 60 | 2000 |
| Detection of buried land mines using a dual-band LWIR/LWIR QWIP focal plane array A Goldberg, PN Uppal, M Winn Infrared Physics & Technology 44 (5-6), 427-437, 2003 | 55 | 2003 |
| Interface dislocation structures in InxGa1−xAs/GaAs mismatched epitaxy KR Breen, PN Uppal, JS Ahearn Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989 | 48 | 1989 |
| GaAs substrate with Sb buffering for high in devices PN Uppal US Patent 6,888,179, 2005 | 47 | 2005 |
| Interdigitated finger semiconductor photodetector for optoelectronic mixing PH Shen, MR Stead, MA Taysing-Lara, J Pamulapati, WC Ruff, BL Stann, ... Infrared Detectors and Focal Plane Arrays VI 4028, 426-435, 2000 | 46 | 2000 |
| Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization JW Little, SP Svensson, WA Beck, AC Goldberg, SW Kennerly, ... Journal of applied physics 101 (4), 2007 | 43 | 2007 |
| GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets DM Gill, PN Uppal US Patent 5,770,868, 1998 | 28 | 1998 |
| Molecular‐beam‐epitaxial growth of GaAs (331) PN Uppal, JS Ahearn, DP Musser Journal of applied physics 62 (9), 3766-3771, 1987 | 28 | 1987 |
| Large-format and multispectral QWIP infrared focal plane arrays AC Goldberg, KK Choi, M Jhabvala, A La, PN Uppal, ML Winn Infrared Technology and Applications XXIX 5074, 83-94, 2003 | 20 | 2003 |
| MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications PN Uppal, G Charache, P Baldasaro, B Campbell, S Loughin, ... Journal of crystal growth 175, 877-882, 1997 | 17 | 1997 |
| Component research for the MDSS LADAR BL Stann, M Giza, W Ruff, A Abou-Auf, P Shen, M Stead, M Taysing-Lara, ... Proc. of Advanced Sensors Consortium, 25-32, 2000 | 15 | 2000 |
| Development of a dual-band LWIR/LWIR QWIP focal plane array for detection of buried land mines AC Goldberg, T Fischer, ZI Derzko, PN Uppal, ML Winn Infrared Detectors and Focal Plane Arrays VII 4721, 184-195, 2002 | 12 | 2002 |
| Homogeneous nucleation of dislocations in In0.4Ga0.6As/GaAs near critical thickness KR Breen, PN Uppal, JS Ahearn Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 12 | 1990 |
| Dual band MWIR/LWIR focal plane array test results A Goldberg, S Wang, M Sundaram, P Uppal, M Winn, G Milne, M Stevens Proc. 1999 Meeting of the IRIS Specialty Group on Detectors, 87, 2016 | 11 | 2016 |
| InP-based multiwavelength QWIP technology AM Fathimulla, H Hier, L Aina, T Worchesky, P Uppal Infrared Technology and Applications XXX 5406, 589-599, 2004 | 11 | 2004 |
| Dual-band imaging of military targets using a QWIP focal plane array A Goldberg, T Fischer, S Kennerly, S Wang, M Sundaram, P Uppal, ... Source:〈 https://pdfs. semanticscholar. org/c188/60cc22053cef0061 …, 2001 | 11 | 2001 |
| Influence of nonuniform charge distribution in In0. 53Ga0. 47As on the interpretation of dopant incorporation SP Svensson, WA Beck, DC Martel, PN Uppal, DC Cooke Journal of crystal growth 111 (1-4), 450-455, 1991 | 11 | 1991 |
