Randall Feenstra
Randall Feenstra
Professor of Physics, Carnegie Mellon University
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Название
Процитировано
Процитировано
Год
Tunneling spectroscopy of the Si (111) 2× 1 surface
RM Feenstra, JA Stroscio, AP Fein
Surface science 181 (1-2), 295-306, 1987
8061987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 57 (20), 2579, 1986
7921986
Atom-selective imaging of the GaAs (110) surface
RM Feenstra, JA Stroscio, J Tersoff, AP Fein
Physical review letters 58 (12), 1192, 1987
7891987
Tunneling spectroscopy of the GaAs (110) surface
RM Feenstra, JA Stroscio
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
5261987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra
Physical Review B 50 (7), 4561, 1994
5051994
Reconstructions of the GaN (000 1) surface
AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup
Physical review letters 79 (20), 3934, 1997
4321997
Structure of GaN (0001): The laterally contracted Ga bilayer model
JE Northrup, J Neugebauer, RM Feenstra, AR Smith
Physical Review B 61 (15), 9932, 2000
4012000
Determination of wurtzite GaN lattice polarity based on surface reconstruction
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
3911998
Adatom kinetics on and below the surface: The existence of a new diffusion channel
J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ...
Physical review letters 90 (5), 056101, 2003
3372003
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1
RM Feenstra, WA Thompson, AP Fein
Physical review letters 56 (6), 608, 1986
3181986
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy
P Mårtensson, RM Feenstra
Physical Review B 39 (11), 7744, 1989
2901989
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
2891998
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve
Journal of Electronic Materials 27 (4), 308-312, 1998
2671998
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 58 (16), 1668, 1987
2641987
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
2571988
Inversion of wurtzite GaN (0001) by exposure to magnesium
V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ...
Applied Physics Letters 75 (6), 808-810, 1999
2561999
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
RM Feenstra, JM Woodall, GD Pettit
Physical review letters 71 (8), 1176, 1993
2451993
Fermi-level pinning at the Sb/GaAs (110) surface studied by scanning tunneling spectroscopy
RM Feenstra, P Mårtensson
Physical review letters 61 (4), 447, 1988
2441988
Influence of misfit dislocations on the surface morphology of Si1−xGex films
MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu
Applied physics letters 66 (6), 724-726, 1995
2361995
Scanning tunneling spectroscopy
RM Feenstra
Surface science 299, 965-979, 1994
2271994
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Статьи 1–20