| A new electrothermal model of the power MOSFET for SPICE J Zarębski, K Górecki, D Bisewski 11-th Int. Conf. Mixed Design of Int. Circuits and Systems MIXDES 2004, 89, 2004 | 11 | 2004 |
| Examinations of selected thermal properties of packages of SiC Schottky diodes D Bisewski, M Myśliwiec, K Górecki, R Kisiel, J Zarębski Metrology and Measurement Systems 23 (3), 2016 | 10 | 2016 |
| SPICE-aided modeling of high-voltage silicon carbide JFETs K Bargieł, J Zarębski, D Bisewski 39th International Microelectronics and Packaging Poland Conference (IMAPS …, 2016 | 7 | 2016 |
| Nonlinear compact thermal model of SiC power semiconductor devices K Górecki, J Zarębski, D Bisewski, J Dąbrowski Proceedings of the 17th International Conference Mixed Design of Integrated …, 2010 | 7 | 2010 |
| Estimation of parameters of GaAs and SiC MESFETs using genetic algorithm D Bisewski 45th International Conference on Microelectronics, Devices and Materials …, 2009 | 7 | 2009 |
| Electrothermal Model of SiC Power BJT J Patrzyk, D Bisewski, J Zarębski Energies 13 (10), 2617, 2020 | 6 | 2020 |
| Parameters estimation of SPICE models for silicon carbide devices D Bisewski 2017 21st European Microelectronics and Packaging Conference (EMPC …, 2017 | 6 | 2017 |
| DC characteristics and parameters of silicon carbide high-voltage power BJTs J Patrzyk, J Zarębski, D Bisewski 39th International Microelectronics and Packaging Poland Conference (IMAPS …, 2016 | 6 | 2016 |
| An influence of the selected factors on the transient thermal impedance model of power MOSFET K Górecki, J Zarębski, D Bisewski Informacije MIDEM 45 (2), 110-116, 2015 | 6 | 2015 |
| Investigations of thermal parameters of GaAs and SiC MESFETs D Bisewski, J Zarębski Przegląd Elektrotechniczny 87 (1), 271-274, 2011 | 6 | 2011 |
| Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case K Górecki, D Bisewski, J Zarębski, R Kisiel, M Myśliwiec Circuit World 43 (1), 38-42, 2017 | 5 | 2017 |
| Modelling of dynamic properties of silicon carbide junction field-effect transistors (JFETs) K Bargieł, D Bisewski, J Zarębski Energies 13 (1), 187, 2020 | 4 | 2020 |
| Evaluation of accuracy of SiC-JFET macromodel K Bargieł, D Bisewski ITM Web of Conferences 19, 01027, 2018 | 4 | 2018 |
| Estymacja parametrów modelu Danga tranzystora MOS J Zarębski, D Bisewski Elektronika: konstrukcje, technologie, zastosowania 50 (6), 87-90, 2009 | 4 | 2009 |
| Charakterystyki statyczne tranzystora mocy SiC-JFET K Bargieł, D Bisewski Przegląd Elektrotechniczny 94, 63-66, 2018 | 3* | 2018 |
| Modelling of silicon carbide JFET in SPICE K Bargieł, D Bisewski 2017 21st European Microelectronics and Packaging Conference (EMPC …, 2017 | 3 | 2017 |
| Laboratorium projektowania i konstrukcji urządzeń elektronicznych K Górecki, J Zarębski, D Bisewski, J Dąbrowski, P Jasicki Wiadomości elektrotechniczne 80, 34-36, 2012 | 3 | 2012 |
| Pomiary parametrów cieplnych elementów półprzewodnikowych wykonanych z węglika krzemu J Zarębski, J Dąbrowski, D Bisewski Przegląd Elektrotechniczny 87 (10), 29-32, 2011 | 3 | 2011 |
| Modele i makromodele tranzystorów MOS mocy dla programu SPICE J Zarębski, D Bisewski Elektronika: konstrukcje, technologie, zastosowania 50 (6), 96-100, 2009 | 3 | 2009 |
| Measurements of transient thermal impedance of MESFETs D Bisewski, J Zarębski 2008 International Conference on" Modern Problems of Radio Engineering …, 2008 | 3 | 2008 |
