| Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies LI Khirunenko, YV Pomozov, NA Tripachko, MG Sosnin, AV Duvanskii, ... Solid State Phenomena 108, 261-266, 2005 | 22 | 2005 |
| Oxygen Diffusion in Si1-xGex Alloys LI Khirunenko, YV Pomozov, MG Sosnin, AV Duvanskii, SK Golyk, ... Solid State Phenomena 156, 181-186, 2010 | 12 | 2010 |
| Oxygen diffusion in Si1-xGex alloys LI Khirunenko, YV Pomozov, MG Sosnin, AV Duvanskii, NA Sobolev, ... Physica B: Condensed Matter 404 (23-24), 4698-4700, 2009 | 12 | 2009 |
| The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms VE Gusakov, SB Lastovskii, LI Murin, EA Tolkacheva, LI Khirunenko, ... physica status solidi (a) 214 (7), 1700261, 2017 | 7 | 2017 |
| Defects involving interstitial boron in low-temperature irradiated silicon LI Khirunenko, MG Sosnin, AV Duvanskii, NV Abrosimov, H Riemann Physical Review B 94 (23), 235210, 2016 | 6 | 2016 |
| Divacancy-tin related defects in irradiated germanium LI Khirunenko, MG Sosnin, AV Duvanskii, NV Abrosimov, H Riemann Journal of Applied Physics 123 (16), 2018 | 5 | 2018 |
| Boron-oxygen-related defect in silicon LI Khirunenko, YV Pomozov, MG Sosnin, AV Duvanskii Solid State Phenomena 178, 178-182, 2011 | 4 | 2011 |
| Divacancy-related complexes in Si (1− x) Ge (x) LI Khirunenko, YV Pomozov, MG Sosnin, MO Trypachko, AV Duvanskii, ... Materials science in semiconductor processing 9 (4-5), 525-530, 2006 | 4 | 2006 |
| Boron-related Defects in Low Temperature Irradiated Silicon L Khirunenko, M Sosnin, AV Duvanskii, NV Abrosimov, H Riemann Solid State Phenomena 242, 285-289, 2016 | 3 | 2016 |
| Interstitial carbon-related defects in Si1− xGex alloys LI Khirunenko, YV Pomozov, MG Sosnin, A Duvanskii, VJB Torres, ... Physica B: Condensed Matter 401, 200-204, 2007 | 3 | 2007 |
| Electronic absorption of interstitial boron‐related defects in silicon LI Khirunenko, MG Sosnin, AV Duvanskii, NV Abrosimov, H Riemann physica status solidi (a) 214 (7), 1700245, 2017 | 2 | 2017 |
| Oxygen in Ge: Sn LI Khirunenko, YV Pomozov, MG Sosnin, AV Duvanskii, NV Abrosimov, ... Semiconductors 44, 1253-1257, 2010 | 2 | 2010 |
| Local vibrations of interstitial carbon in SiGe alloys LI Khirunenko, YV Pomozov, MG Sosnin, MO Trypachko, A Duvanskii, ... Materials science in semiconductor processing 9 (4-5), 514-519, 2006 | 2 | 2006 |
| The Features of Infrared Absorption of Boron‐Doped Silicon L Khirunenko, M Sosnin, A Duvanskii, N Abrosimov, H Riemann physica status solidi (a) 218 (23), 2100181, 2021 | 1 | 2021 |
| New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon LI Khirunenko, MG Sosnin, AV Duvanskii, NV Abrosimov, H Riemann Journal of Applied Physics 132 (13), 2022 | | 2022 |
| Features of the Formation of the BiBs Defect in Si L Khirunenko, M Sosnin, A Duvanskii, N Abrosimov, H Riemann physica status solidi (a) 216 (17), 1900291, 2019 | | 2019 |
| Radio-electronic elements with increased resistance to the effect of space radiation AV Duvanskii, MG Sosnin, LI Khirunenko Kosm. nauka tehnol. 21 (2), 34–35, 2015 | | 2015 |
| Oxygen in Ge: Sn YV Pomozov, MG Sosnin, AV Duvanskii, NV Abrosimov, H Riemann Semiconductors 44 (10), 2010 | | 2010 |
| Особенности трансформации вакансионных дефектов в германии, легированном оловом ЛИ Хируненко, ЮВ Помозов, МГ Соснин, АВ Дуванский, ... ЗФ Красильник председатель, Институт физики микроструктур РАН, Н. Новгород …, 2010 | | 2010 |
| Interstitial Carbon-Related Defects in Si1-xGex Alloys LI Khirunenko, YV Pomozov, MG Sosnin, AV Duvanskii, V Torres, ... Solid State Phenomena 131, 59-64, 2008 | | 2008 |
