| Characterization of dielectric layers grown at low temperature by atomic layer deposition S Gieraltowska, L Wachnicki, BS Witkowski, R Mroczynski, P Dluzewski, ... Thin Solid Films 577, 97-102, 2015 | 41 | 2015 |
| Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films M Szymańska, S Gierałtowska, Ł Wachnicki, M Grobelny, K Makowska, ... Applied Surface Science 301, 28-33, 2014 | 33 | 2014 |
| Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices R Mroczyński, A Taube, S Gierałtowska, E Guziewicz, M Godlewski Applied surface science 258 (21), 8366-8370, 2012 | 20 | 2012 |
| Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks A Taube, R Mroczyński, K Korwin-Mikke, S Gierałtowska, J Szmidt, ... Materials Science and Engineering: B 177 (15), 1281-1285, 2012 | 19 | 2012 |
| Effect of annealing on optical, mechanical, electrical properties and structure of scandium oxide films A Belosludtsev, Y Yakimov, R Mroczyński, S Stanionytė, M Skapas, ... physica status solidi (a) 216 (18), 1900122, 2019 | 16 | 2019 |
| 450 nm (Al, In) GaN optical amplifier with double ‘j-shape’waveguide for master oscillator power amplifier systems S Stanczyk, A Kafar, S Grzanka, M Sarzynski, R Mroczynski, S Najda, ... Optics Express 26 (6), 7351-7357, 2018 | 16 | 2018 |
| Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing R Mroczyński, N Kwietniewski, M Ćwil, P Hoffmann, RB Beck, ... Vacuum 82 (10), 1013-1019, 2008 | 16 | 2008 |
| Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO2) layers for non-volatile semiconductor memory (NVSM) applications R Mroczyński, RB Beck Microelectronics Reliability 52 (1), 107-111, 2012 | 12 | 2012 |
| Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices R Mroczyński, RB Beck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 12 | 2009 |
| Optimization of ultra-thin pulsed-DC magnetron sputtered aluminum films for the technology of hyperbolic metamaterials R Mroczyński, D Iwanicki, B Fetliński, M Ożga, M Świniarski, A Gertych, ... Crystals 10 (5), 384, 2020 | 11 | 2020 |
| Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices R Mroczyński, M Szymańska, W Głuszewski Journal of Vacuum Science & Technology B 33 (1), 2015 | 11 | 2015 |
| Technology and characterization of MIS structures with co-doped silicon nanocrystals (Si-NCs) embedded in hafnium oxide (HfOx) ultra-thin layers A Mazurak, R Mroczyński, J Jasiński, D Tanous, B Majkusiak, S Kano, ... Microelectronic Engineering 178, 298-303, 2017 | 10 | 2017 |
| Refractive index of heavily germanium-doped gallium nitride measured by spectral reflectometry and ellipsometry D Schiavon, R Mroczyński, A Kafar, G Kamler, I Levchenko, S Najda, ... Materials 14 (23), 7364, 2021 | 8 | 2021 |
| Silicon-Carbide (SiC) nanocrystal technology and characterization and its applications in memory structures A Mazurak, R Mroczyński, D Beke, A Gali Nanomaterials 10 (12), 2387, 2020 | 8 | 2020 |
| Silicon oxynitride layers fabricated by plasma enhanced chemical vapor deposition (PECVD) for CMOS devices R Mroczyński, R Beck ECS Transactions 25 (8), 797, 2009 | 8 | 2009 |
| Effect of sample elevation in radio frequency plasma enhanced chemical vapor deposition (RF PECVD) reactor on optical properties and deposition rate of silicon nitride thin films M Œmietana, R Mroczyński, N Kwietniewski Materials 7 (2), 1249-1260, 2014 | 7 | 2014 |
| Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices R Mroczyński, M Ożga, M Godlewski, BS Witkowski Solid-State Electronics 194, 108357, 2022 | 6 | 2022 |
| Investigations of structural and electrical properties of ALD films formed with the ozone precursor A Seweryn, K Lawniczak-Jablonska, P Kuzmiuk, S Gieraltowska, ... Materials 14 (18), 5395, 2021 | 6 | 2021 |
| Technology and optimization of hafnium oxynitride (HfOxNy) thin-films formed by pulsed-DC reactive magnetron sputtering for MIS devices M Puźniak, W Gajewski, M Żelechowski, J Jamroz, A Gertych, M Zdrojek, ... Microelectronic Engineering 228, 111332, 2020 | 6 | 2020 |
| Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures J Jasiński, A Mazurak, R Mroczyński, B Majkusiak Microelectronic Engineering 147, 349-353, 2015 | 6 | 2015 |
