Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading YY Kudryk, AV Zinovchuk Semiconductor science and technology 26 (9), 095007, 2011 | 32 | 2011 |
The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes AV Zinovchuk, OY Malyutenko, VK Malyutenko, AD Podoltsev, AA Vilisov Journal of Applied Physics 104 (3), 2008 | 32 | 2008 |
Room-temperature InAsSbP∕ InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection VK Malyutenko, OY Malyutenko, AV Zinovchuk Applied physics letters 89 (20), 2006 | 29 | 2006 |
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs VK Malyutenko, OY Malyutenko, AV Zinovchuk, AL Zakheim, DA Zakheim, ... Fifth International Conference on Solid State Lighting 5941, 319-325, 2005 | 26 | 2005 |
Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding YY Kudryk, AK Tkachenko, AV Zinovchuk Semiconductor Science and Technology 27 (5), 055013, 2012 | 25 | 2012 |
Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices VK Malyutenko, AV Zinovchuk, OY Malyutenko Semiconductor Science and Technology 23 (8), 085004, 2008 | 24 | 2008 |
Методика наукових досліджень ОК Ткаченко, АВ Зіновчук, ВЛ Рудніцький Видавництво ЖДУ, 2012 | 10 | 2012 |
Optimized valence force field model for the lattice properties of non-ideal III-nitride wurtzite materials AV Zinovchuk, EA Sevost'yanov Physica B: Condensed Matter 574, 411682, 2019 | 7 | 2019 |
Alloy-assisted Auger recombination in InGaN AV Zinovchuk, AM Gryschuk Optical and Quantum Electronics 50 (12), 455, 2018 | 7 | 2018 |
Development of high-stable contact systems to gallium nitride microwave diodes AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ... Semiconductor Physics Quantum Electronics & Optoelectronics, 2007 | 6 | 2007 |
The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes YY Kudryk, AV Zinovchuk Technical Physics Letters 38, 456-459, 2012 | 5 | 2012 |
Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission AV Zinovchuk, AK Tkachenko Semiconductors 45 (1), 61-65, 2011 | 4 | 2011 |
Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices V Malyutenko, A Zinovchuk Optoelectronic Devices: Physics, Fabrication, and Application III 6368, 97-104, 2006 | 4 | 2006 |
Direct and indirect mechanisms of auger recombination in n-InGaN AV Zinovchuk Technical Physics Letters 40, 408-410, 2014 | 2 | 2014 |
Numerical determination of concentration-dependent Auger recombination coefficient in n n-InGaN alloys AV Zinovchuk Optical and Quantum Electronics 47, 2399-2406, 2015 | 1 | 2015 |
InAs (Sb) LEDs and negative luminescence devices for dynamic scene simulation in the first atmospheric window (3-5 μm) V Malyutenko, O Malyutenko, A Zinovchuk, N Zotova, S Karandashev, ... 6th Int. Conf. on Mid-Infrared Optoelectronics Material and Devices, St …, 0 | 1 | |
Алгоритми оптимізації у фізиці твердого тіла ЗА Бендес Юрій Актуальні питання сучасної інформатики. Випуск XІ Матеріали доповідей VІІІ …, 2024 | | 2024 |
Fluctuations of piezoelectric polarization in III-nitride quantum wells AV Zinovchuk, DA Stepanchikov, RY Vasylieva, VS Slipokurov Ukrainian journal of physics 68 (1), 47-52, 2023 | | 2023 |
Флуктуації п’єзоелектричної поляризації в квантових ямах на основі III-нітридів AV Zinovchuk, DA Stepanchikov, RY Vasylieva, VS Slipokurov Ukrainian Journal of Physics 68 (1), 47-47, 2023 | | 2023 |
ЕЛЕКТРОННІ СТАНИ В 2D КВАНТОВИХ СТРУКТУРАХ НА ОСНОВІ AIIIBV НІТРИДІВ А Зіновчук СЕКЦІЯ І. ГУМАНІТАРНІ НАУКИ ТА МИСТЕЦТВО, 297, 2023 | | 2023 |