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Андрій Зіновчук
Андрій Зіновчук
Other namesZinovchuk Andrey
Житомирський державний університет імені Івана Франка
Verified email at zu.edu.ua
Title
Cited by
Cited by
Year
Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
YY Kudryk, AV Zinovchuk
Semiconductor science and technology 26 (9), 095007, 2011
322011
The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes
AV Zinovchuk, OY Malyutenko, VK Malyutenko, AD Podoltsev, AA Vilisov
Journal of Applied Physics 104 (3), 2008
322008
Room-temperature InAsSbP∕ InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection
VK Malyutenko, OY Malyutenko, AV Zinovchuk
Applied physics letters 89 (20), 2006
292006
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
VK Malyutenko, OY Malyutenko, AV Zinovchuk, AL Zakheim, DA Zakheim, ...
Fifth International Conference on Solid State Lighting 5941, 319-325, 2005
262005
Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
YY Kudryk, AK Tkachenko, AV Zinovchuk
Semiconductor Science and Technology 27 (5), 055013, 2012
252012
Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices
VK Malyutenko, AV Zinovchuk, OY Malyutenko
Semiconductor Science and Technology 23 (8), 085004, 2008
242008
Методика наукових досліджень
ОК Ткаченко, АВ Зіновчук, ВЛ Рудніцький
Видавництво ЖДУ, 2012
102012
Optimized valence force field model for the lattice properties of non-ideal III-nitride wurtzite materials
AV Zinovchuk, EA Sevost'yanov
Physica B: Condensed Matter 574, 411682, 2019
72019
Alloy-assisted Auger recombination in InGaN
AV Zinovchuk, AM Gryschuk
Optical and Quantum Electronics 50 (12), 455, 2018
72018
Development of high-stable contact systems to gallium nitride microwave diodes
AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
62007
The effect of current crowding on the internal quantum efficiency of InAsSb/InAs light-emitting diodes
YY Kudryk, AV Zinovchuk
Technical Physics Letters 38, 456-459, 2012
52012
Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission
AV Zinovchuk, AK Tkachenko
Semiconductors 45 (1), 61-65, 2011
42011
Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices
V Malyutenko, A Zinovchuk
Optoelectronic Devices: Physics, Fabrication, and Application III 6368, 97-104, 2006
42006
Direct and indirect mechanisms of auger recombination in n-InGaN
AV Zinovchuk
Technical Physics Letters 40, 408-410, 2014
22014
Numerical determination of concentration-dependent Auger recombination coefficient in n n-InGaN alloys
AV Zinovchuk
Optical and Quantum Electronics 47, 2399-2406, 2015
12015
InAs (Sb) LEDs and negative luminescence devices for dynamic scene simulation in the first atmospheric window (3-5 μm)
V Malyutenko, O Malyutenko, A Zinovchuk, N Zotova, S Karandashev, ...
6th Int. Conf. on Mid-Infrared Optoelectronics Material and Devices, St …, 0
1
Алгоритми оптимізації у фізиці твердого тіла
ЗА Бендес Юрій
Актуальні питання сучасної інформатики. Випуск XІ Матеріали доповідей VІІІ …, 2024
2024
Fluctuations of piezoelectric polarization in III-nitride quantum wells
AV Zinovchuk, DA Stepanchikov, RY Vasylieva, VS Slipokurov
Ukrainian journal of physics 68 (1), 47-52, 2023
2023
Флуктуації п’єзоелектричної поляризації в квантових ямах на основі III-нітридів
AV Zinovchuk, DA Stepanchikov, RY Vasylieva, VS Slipokurov
Ukrainian Journal of Physics 68 (1), 47-47, 2023
2023
ЕЛЕКТРОННІ СТАНИ В 2D КВАНТОВИХ СТРУКТУРАХ НА ОСНОВІ AIIIBV НІТРИДІВ
А Зіновчук
СЕКЦІЯ І. ГУМАНІТАРНІ НАУКИ ТА МИСТЕЦТВО, 297, 2023
2023
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