Wei Du
Wei Du
Assistant Professor, Department of Electrical Engineering, Wilkes University
Підтверджена електронна адреса в wilkes.edu
НазваПосиланняРік
Direct-bandgap GeSn grown on silicon with 2230nm photoluminescence
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
1232014
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
1222016
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
742014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
662014
Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
622014
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACS Photonics 5 (3), 827-833, 2017
582017
Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711-720, 2014
562014
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
502014
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
492016
Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
362016
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
352017
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016
342016
Si-based Ge0. 9Sn0. 1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
TN Pham, W Du, BR Conley, J Margetis, G Sun, RA Soref, J Tolle, B Li, ...
Electronics letters 51 (11), 854-856, 2015
322015
Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon
SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
322014
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017
282017
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 5640, 2018
222018
Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%
S Al-Kabi, SA Ghetmiri, J Margetis, W Du, A Mosleh, M Alher, W Dou, ...
Journal of Electronic Materials 45 (4), 2133-2141, 2016
222016
Direct growth of Ge1− xSnx films on Si using a cold-wall ultra-high vacuum chemical-vapor-deposition system
A Mosleh, MA Alher, LC Cousar, W Du, SA Ghetmiri, T Pham, JM Grant, ...
Frontiers in Materials 2, 30, 2015
212015
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
202017
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ...
Optics letters 43 (19), 4558-4561, 2018
182018
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