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Fabian Hartmann
Fabian Hartmann
Chair for Applied Physics, Department of Physics and Astronomy, University of Würzburg
Verified email at physik.uni-wuerzburg.de - Homepage
Title
Cited by
Cited by
Year
Voltage fluctuation to current converter with coulomb-coupled quantum dots
F Hartmann, P Pfeffer, S Höfling, M Kamp, L Worschech
Physical review letters 114 (14), 146805, 2015
1352015
Universal and reconfigurable logic gates in a compact three-terminal resonant tunneling diode
L Worschech, F Hartmann, TY Kim, S Höfling, M Kamp, A Forchel, ...
Applied Physics Letters 96 (4), 2010
532010
Logical stochastic resonance with a coulomb-coupled quantum-dot rectifier
P Pfeffer, F Hartmann, S Höfling, M Kamp, L Worschech
Physical Review Applied 4 (1), 014011, 2015
512015
Logical stochastic resonance with a coulomb-coupled quantum-dot rectifier
P Pfeffer, F Hartmann, S Höfling, M Kamp, L Worschech
Physical Review Applied 4 (1), 014011, 2015
512015
Sensitivity of resonant tunneling diode photodetectors
A Pfenning, F Hartmann, F Langer, M Kamp, S Höfling, L Worschech
Nanotechnology 27 (35), 355202, 2016
472016
Electro-photo-sensitive memristor for neuromorphic and arithmetic computing
P Maier, F Hartmann, M Emmerling, C Schneider, M Kamp, S Höfling, ...
Physical Review Applied 5 (5), 054011, 2016
422016
Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths
A Pfenning, F Hartmann, F Langer, S Höfling, M Kamp, L Worschech
Applied Physics Letters 104 (10), 2014
422014
Performance of tau-lepton reconstruction and identification in CMS
S Chatrchyan, V Khachatryan, AM Sirunyan, A Tumasyan, W Adam, ...
Journal of instrumentation 7, 2012
422012
GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing
F Hartmann, F Langer, D Bisping, A Musterer, S Höfling, M Kamp, ...
Applied Physics Letters 100 (17), 2012
412012
Experimental and theoretical analysis of Landauer erasure in nano-magnetic switches of different sizes
L Martini, M Pancaldi, M Madami, P Vavassori, G Gubbiotti, S Tacchi, ...
Nano Energy 19, 108-116, 2016
392016
Light sensitive memristor with bi-directional and wavelength-dependent conductance control
P Maier, F Hartmann, M Rebello Sousa Dias, M Emmerling, C Schneider, ...
Applied Physics Letters 109 (2), 2016
382016
Photocurrent-voltage relation of resonant tunneling diode photodetectors
A Pfenning, F Hartmann, M Rebello Sousa Dias, F Langer, M Kamp, ...
Applied Physics Letters 107 (8), 2015
362015
Nanothermometer based on resonant tunneling diodes: from cryogenic to room temperatures
A Pfenning, F Hartmann, M Rebello Sousa Dias, LK Castelano, ...
ACS nano 9 (6), 6271-6277, 2015
332015
Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications
F Rothmayr, A Pfenning, C Kistner, J Koeth, G Knebl, A Schade, ...
Applied Physics Letters 112 (16), 2018
322018
Nanowatt logic stochastic resonance in branched resonant tunneling diodes
F Hartmann, A Forchel, I Neri, L Gammaitoni, L Worschech
Applied Physics Letters 98 (3), 2011
272011
From micro-to nanomagnetic dots: evolution of the eigenmode spectrum on reducing the lateral size
G Carlotti, G Gubbiotti, M Madami, S Tacchi, F Hartmann, M Emmerling, ...
Journal of Physics D: Applied Physics 47 (26), 265001, 2014
242014
Light-induced stochastic resonance in a nanoscale resonant-tunneling diode
F Hartmann, L Gammaitoni, S Höfling, A Forchel, L Worschech
Applied Physics Letters 98 (24), 2011
222011
Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection
A Pfenning, G Knebl, F Hartmann, R Weih, A Bader, M Emmerling, ...
Applied Physics Letters 110 (3), 2017
192017
Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes
F Hartmann, A Pfenning, M Rebello Sousa Dias, F Langer, S Höfling, ...
Journal of Applied Physics 122 (15), 2017
172017
Memristive operation mode of a site-controlled quantum dot floating gate transistor
P Maier, F Hartmann, T Mauder, M Emmerling, C Schneider, M Kamp, ...
Applied Physics Letters 106 (20), 2015
162015
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