Mads Eide Ingebrigtsen

120

201820192020202120222023202423 75 117 75 88 88 37

Public access

4 articles

0 articles

available

not available

Based on funding mandates

Mads Eide Ingebrigtsen

Verified email at smn.uio.no - Homepage


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Iron and intrinsic deep level states in Ga2O3 ME Ingebrigtsen, JB Varley, AY Kuznetsov, BG Svensson, G Alfieri, ... Applied Physics Letters 112 (4), 042104, 2018	259	2018
Impact of proton irradiation on conductivity and deep level defects in β-Ga2O3 ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... Apl Materials 7 (2), 2019	196*	2019
Bulk β-Ga₂O₃ with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects ME Ingebrigtsen, L Vines, G Alfieri, A Mihaila, U Badstübner, ... Materials Science Forum 897, 755-758, 2017	29	2017
Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures ME Ingebrigtsen, AY Kuznetsov, BG Svensson, G Alfieri, A Mihaila, ... Journal of Applied Physics 125 (18), 2019	20	2019
Electrical characterization and identification of deep levels in β-Ga2O3 ME Ingebrigtsen	2	2019
Band gap engineering of the ZnO/Si heterojunction using amorphous buffer layers ME Ingebrigtsen		2014

The system can't perform the operation now. Try again later.

Articles 1–6

Citations per year