MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates N Baidus, V Aleshkin, A Dubinov, K Kudryavtsev, S Nekorkin, A Novikov, ...
Crystals 8 (8), 311, 2018
25 2018 Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si (100) with Ge/GaAs buffer NV Kryzhanovskaya, EI Moiseev, YS Polubavkina, MV Maximov, ...
Optics Express 25 (14), 16754-16760, 2017
17 2017 Methods for spin injection managing in inGaAs/GaAs/Al2O3/CoPt spin light-emitting diodes MV Dorokhin, MV Ved, PB Demina, AV Zdoroveyshchev, AV Kudrin, ...
Physics of the Solid State 59 (11), 2155-2161, 2017
11 * 2017 Structural investigation of light-emitting A3B5 structures grown on Ge/Si (100) substrate AV Rykov, MV Dorokhin, PS Vergeles, VA Kovalskiy, EB Yakimov, ...
J. Phys.: Conf. Ser 1124, 022037, 2018
10 2018 Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates NV Baidus, VY Aleshkin, AA Dubinov, KE Kudryavtsev, SM Nekorkin, ...
Semiconductors 51 (11), 1527-1530, 2017
9 * 2017 Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence MV Dorokhin, SV Zaitsev, AV Rykov, AV Zdoroveyshchev, EI Malysheva, ...
Technical Physics 62 (10), 1545-1550, 2017
9 * 2017 Structural and optical characteristics of GaAs films grown on Si/Ge substrates AV Rykov, MV Dorokhin, PS Vergeles, NV Baidus, VA Kovalskiy, ...
Journal of Physics: Conference Series 993 (1), 012014, 2018
6 2018 Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate VY Aleshkin, NV Baidus, AA Dubinov, KE Kudryavtsev, SM Nekorkin, ...
Semiconductors 51 (11), 1477-1480, 2017
6 * 2017 On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si (001) substrates VY Aleshkin, NV Baidus, AA Dubinov, ZF Krasilnik, SM Nekorkin, ...
Semiconductors 51 (5), 663-666, 2017
6 * 2017 Temperature stabilization of spin-LEDs with a CoPt injector AV Rykov, MV Dorokhin, PB Demina, AV Zdoroveyshchev, MV Ved
Journal of Physics Conference Series 816 (1), 012034, 2017
6 2017 Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs AA Sushkov, DA Pavlov, AI Andrianov, VG Shengurov, SA Denisov, ...
Semiconductors 56 (2), 122-133, 2022
2 2022 Effect of the AlGaAs Seed Layer Composition on Antiphase Domains Formation in (Al) GaAs Structures Grown by Vapor-Phase Epitaxy on Ge/Si (100) Substrates AV Rykov, RN Kryukov, IV Samartsev, PA Yunin, VG Shengurov, ...
Technical Physics Letters 47 (5), 413-416, 2021
2 2021 On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge … NV Baidus, VY Aleshkin, AA Dubinov, ZF Krasilnik, KE Kudryavtsev, ...
Semiconductors 52 (12), 1547-1550, 2018
2 2018 Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer AV Rykov, MV Dorokhin, EI Malysheva, PB Demina, OV Vikhrova, ...
Semiconductors 50 (1), 1-7, 2016
2 2016 Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2 O3 Substrate AA Sushkov, DA Pavlov, VG Shengurov, SA Denisov, VY Chalkov, ...
Semiconductors 53 (9), 1242-1245, 2019
1 2019 Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/δ〈 Mn〉 heterostructures EI Malysheva, MV Dorokhin, PB Demina, AV Zdoroveyshchev, AV Rykov, ...
Physics of the Solid State 59 (11), 2162-2167, 2017
1 2017 Epitaxial Structures for Low-Barrier Mixing Microwave Diodes Grown on a GaAs Substrate IV Samartsev, SM Nekorkin, BN Zvonkov, AV Rykov, AB Chigineva, ...
Bulletin of the Russian Academy of Sciences: Physics 87 (6), 857-861, 2023
2023 Comparison of AA Sushkov, DA Pavlov, AI Andrianov, VG Shengurov, SA Denisov, ...
Fizika i Tekhnika Poluprovodnikov 55 (11), 978-988, 2021
2021 GaAs diode structures with n+-p junction on Ge/Si templates AV Rykov, SA Denisov, VG Shengurov, NV Baidus, YN Buzynin
Journal of Physics: Conference Series 1482 (1), 012034, 2020
2020 Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al {sub 2} O {sub 3} Substrate DA Pavlov, VG Shengurov, SA Denisov, VY Chalkov, NV Baidus, ...
Semiconductors (Woodbury, NY, Print) 53 (9), 2019
2019 