Підписатись
A.B. Smirnov
A.B. Smirnov
Lashkaryov Institute semiconductor physics NAS of Ukraine
Підтверджена електронна адреса в isp.kiev.ua - Домашня сторінка
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Посилання
Рік
Nitrogen incorporation into GaAs lattice as a result of the surface cavitation effect
RK Savkina, AB Smirnov
Journal of Physics D: Applied Physics 43 (42), 425301, 2010
162010
Antireflection properties of diamond-like carbon films on Cd1 − x Zn x Te (x ∼ 0.04) single crystals
FF Sizov, NI Klyui, AN Luk’yanov, RK Savkina, AB Smirnov, AZ Evmenova
Technical Physics Letters 34, 377-380, 2008
142008
The effect of high-frequency sonication on charge carrier transport in LPE and MBE HgCdTe layers
RK Savkina, AB Smirnov, FF Sizov
Semiconductor science and technology 22 (2), 97, 2006
122006
Multi‐band radiation detector based on HgCdTe heterostructure
T Kryshtab, RK Savkina, AB Smirnov, M Kladkevich, V Samoylov
physica status solidi (c) 13 (7‐9), 639-642, 2016
102016
Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions
AB Sizov, F.F., Savkina, R.K., Smirnov
Phys. Solid State 56, 2160–2165, 2014
102014
Role of mechanical stresses at ion implantation of CdHgTe solid solutions
AB Smirnov, OS Lytvyn, VA Morozhenko, RK Savkina, MI Smoliy, ...
Ukrainian journal of physics 58 (9), 872-872, 2013
102013
Sonosynthesis of microstructures array for semiconductor photovoltaics
RK Savkina, AB Smirnov, T Kryshtab, A Kryvko
Materials Science in Semiconductor Processing 37, 179-184, 2015
92015
Silicon surface functionalization based on cavitation processing
RK Savkina, AB Smirnov, AI Gudymenko, VA Morozhenko, AS Nikolenko, ...
Surface and Coatings Technology 343, 17-23, 2018
82018
Ion beam nanostructuring of HgCdTe ternary compound
AB Smirnov, RK Savkina, RS Udovytska, OI Gudymenko, VP Kladko, ...
Nanoscale Research Letters 12, 1-9, 2017
82017
Silicon substrate strained and structured via cavitation effect for photovoltaic and biomedical application
RK Savkina, AI Gudymenko, VP Kladko, AA Korchovyi, AS Nikolenko, ...
Nanoscale research letters 11, 1-7, 2016
82016
Temperature rise in crystals subjected to ultrasonic influence
RK Savkina, AB Smirnov
Infrared physics & technology 46 (5), 388-393, 2005
82005
Infrared radiation detection by a piezoelectric heterostructure at room temperature
T Kryshtab, R Savkina, F Sizov, A Smirnov, M Kladkevich, V Samoylov
physica status solidi c 9 (8‐9), 1793-1796, 2012
72012
Structural and magnetoresistive properties of nanometric films based on iron and chromium oxides on the Si substrate
AB Smirnov, SB Kryvyi, SA Mulenko, ML Sadovnikova, RK Savkina, ...
Nanoscale research letters 11, 1-6, 2016
62016
Ultrasound-induced nitride formation on the surface of single-crystalline GaAs in cryogenic fluid
RK Savkina, AB Smirnov
Technical Physics Letters 41, 164-167, 2015
52015
Prosvetlyayushchie svoystva almazopodobnykh uglerodnykh plenok, nanesennykh na monokristally Cd1-xZnxTe (x~ 0.04)[Antireflection properties of diamond-like carbon films on Cdi …
FF Sizov, NI Klyuy, AN Luk'yanov, RK Savkina, AB Smirnov, ...
Pis' ma v ZhTF 34 (9), 32-40, 2008
52008
Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy
SI Krukovsky, VM Popov, RK Savkina, AB Smirnov
The European Physical Journal Applied Physics 27 (1-3), 177-179, 2004
52004
CdTe Polycrystalline Surface Subjected to Pulsed Laser Irradiation.
A Baıdullaeva, AI Vlasenko, PE Mozol, AB Smirnov
Semiconductors 35 (6), 2001
52001
Effect of Stress on Defect Transformation in and Implanted HgCdTe/CdZnTe Structures
R Savkina, A Smirnov, A Gudymenko, V Kladko, F Sizov, C Frigeri
Acta Physica Polonica A 125 (4), 1003-1005, 2014
42014
Ion-plasma treatment of Cd1 − x Zn x Te (x ∼ 0.04) single crystals and application of antireflection diamond-like carbon films
NI Klyui, VB Lozinskii, AN Luk’yanov, VA Morozhenko, RK Savkina, ...
Technical Physics 57, 1121-1126, 2012
42012
Residual stresses and piezoelectric properties of the HgCdTe–based compound heterostructures under the anisotropic deformation restriction
AB Smirnov
Semiconductor Physics Quantum Electronics & Optoelectronics, 2012
42012
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