Mourad Benamara
Mourad Benamara
Institute for Nanoscience & Engineering, University of Arkansas
Підтверджена електронна адреса в uark.edu
НазваПосиланняРік
Current developments in fluorescent PET (photoinduced electron transfer) sensors and switches
B Daly, J Ling, AP De Silva
Chemical Society Reviews 44 (13), 4203-4211, 2015
300*2015
Pure and stable metallic phase molybdenum disulfide nanosheets for hydrogen evolution reaction
X Geng, W Sun, W Wu, B Chen, A Al-Hilo, M Benamara, H Zhu, ...
Nature communications 7, 10672, 2016
2872016
Two-Dimensional Water-Coupled Metallic MoS2 with Nanochannels for Ultrafast Supercapacitors
X Geng, Y Zhang, Y Han, J Li, L Yang, M Benamara, L Chen, H Zhu
Nano letters 17 (3), 1825-1832, 2017
1312017
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
ZQ Fang, DC Look, J Jasinski, M Benamara, Z Liliental-Weber, RJ Molnar
Applied Physics Letters 78 (3), 332-334, 2001
1082001
Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields
MD Teodoro, VL Campo Jr, V Lopez-Richard, E Marega Jr, GE Marques, ...
Physical review letters 104 (8), 086401, 2010
972010
Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields
MD Teodoro, VL Campo Jr, V Lopez-Richard, E Marega Jr, GE Marques, ...
Physical review letters 104 (8), 086401, 2010
972010
Mg-doped GaN: Similar defects in bulk crystals and layers grown on by metal–organic chemical-vapor deposition
Z Liliental-Weber, M Benamara, W Swider, J Washburn, I Grzegory, ...
Applied Physics Letters 75 (26), 4159-4161, 1999
911999
1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
M Tang, S Chen, J Wu, Q Jiang, VG Dorogan, M Benamara, YI Mazur, ...
Optics express 22 (10), 11528-11535, 2014
892014
Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties
Z Li, H Qin, D Guzun, M Benamara, G Salamo, X Peng
Nano Research 5 (5), 337-351, 2012
802012
Structure of the carrot defect in 4H-SiC epitaxial layers
M Benamara, X Zhang, M Skowronski, P Ruterana, G Nouet, ...
Applied Physics Letters 86 (2), 021905, 2005
782005
1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°
SM Chen, MC Tang, J Wu, Q Jiang, VG Dorogan, M Benamara, YI Mazur, ...
Electronics Letters 50 (20), 1467-1468, 2014
712014
Kinetics of Ge growth at low temperature on Si (001) by ultrahigh vacuum chemical vapor deposition
M Halbwax, D Bouchier, V Yam, D Débarre, LH Nguyen, Y Zheng, ...
Journal of applied physics 97 (6), 064907, 2005
672005
Electron beam and optical depth profiling of quasibulk GaN
L Chernyak, A Osinsky, G Nootz, A Schulte, J Jasinski, M Benamara, ...
Applied Physics Letters 77 (17), 2695-2697, 2000
652000
Core structure and properties of partial dislocations in silicon carbide diodes
S Ha, M Benamara, M Skowronski, H Lendenmann
Applied physics letters 83 (24), 4957-4959, 2003
602003
Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications
A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ...
Journal of electronic materials 43 (4), 938-946, 2014
592014
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n …
Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ...
AIP Advances 3 (7), 072112, 2013
552013
Correlations between spatially resolved Raman shifts and dislocation density in GaN films
G Nootz, A Schulte, L Chernyak, A Osinsky, J Jasinski, M Benamara, ...
Applied physics letters 80 (8), 1355-1357, 2002
552002
Spontaneous ordering in bulk GaN: Mg samples
Z Liliental-Weber, M Benamara, J Washburn, I Grzegory, S Porowski
Physical review letters 83 (12), 2370, 1999
551999
InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate
S Chen, M Tang, Q Jiang, J Wu, VG Dorogan, M Benamara, YI Mazur, ...
Acs Photonics 1 (7), 638-642, 2014
522014
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
Z Liliental-Weber, M Benamara, J Washburn, JZ Domagala, J Bak-Misiuk, ...
Journal of electronic materials 30 (4), 439-444, 2001
482001
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