Міца Володимир (Mitsa V.)

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Roman M. HolombAssoc. Prof., Dept. Informative Operating Systems and Technologies, Uzhhorod National UniversityVerified email at uzhnu.edu.ua
Miklos VeresWigner Research Centre for PhysicsVerified email at wigner.hu
Oleksandr KondratУжгородський національний університет, факультет інформаційних технологійVerified email at uzhnu.edu.ua
Vladimir MatolinUniverzita KarlovaVerified email at mbox.troja.mff.cuni.cz
Kevin PrinceElettra Fellow, Elettra Sincrotrone TriesteVerified email at Elettra.eu
Patrik JohanssonProf., Dept. of Physics, Chalmers Univ. of Techn., Sweden, Co-director Alistore-ERI CNRS FR 3104Verified email at chalmers.se
Mile IvandaSenior ScientistVerified email at irb.hr
Alexander StronskiHead of department, Institute of Semiconductor Physics NAS UkraineVerified email at isp.kiev.ua
Sevim AkyuzProfessor of Physics, Istanbul Kultur UniversityVerified email at iku.edu.tr
Billes FerencVerified email at mail.bme.hu
László HimicsInstitute for Solid State Physics and Optics, Wigner Research Center for PhysicsVerified email at wigner.mta.hu
Ozren GamulinUniversity of Zagreb, School of MedicineVerified email at mef.hr
Aleksandar MaticProfessor of Physics, Chalmers University of TechnologyVerified email at chalmers.se
Borkach E.Transcarpathian Hungarian Institute named after Ferenc Rákóczi IIVerified email at kmf.uz.ua
Maja BalarinAss. Prof. of Biophysics, University of Zagreb, School of MedicineVerified email at mef.hr
Yaroslav ShpotyukIvan Franko National University of LvivVerified email at lnu.edu.ua
István RigóInstitute for Solid State Physics and Optics, Wigner Research Centre for Physics, HAS, BudapestVerified email at wigner.mta.hu
Sára TóthDiamond Foundry IncVerified email at diamondfoundry.com
Mihai PopescuNational Institute of Materials PhysicsVerified email at infim.ro
Marin Kosović

Міца Володимир (Mitsa V.)

Uzhhorod National University (Ужгородський національний університет)

Verified email at uzhnu.edu.ua

фізика некристалічних напівпровідників


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Simulation of Raman spectra of AsxS100-x glasses by the results of ab initio calculations of AsnSm clusters vibrations RM Holomb, VM Mitsa	49	2004
Comparison of structural transforma‐tions in bulk and as‐evaporated optical media under action of polychromatic or photon‐energy dependent monochromatic illumination R Holomb, V Mitsa, O Petrachenkov, M Veres, A Stronski, M Vlček physica status solidi (c) 8 (9), 2705-2708, 2011	46	2011
Local structure of technologically modified g-GeS2: resonant Raman and absorption edge spectroscopy combined with ab initio calculations R Holomb*, P Johansson, V Mitsa, I Rosola Philosophical Magazine 85 (25), 2947-2960, 2005	43	2005
Ring-, branchy-, and cage-like AsnSm nanoclusters in the structure of amorphous semiconductors: ab initio and Raman study RM Holomb, M Veres, VM Mitsa	42	2009
Calculation of the vibrational spectra of arsenic sulfide clusters F Billes, V Mitsa, I Fejes, N Mateleshko, I Fejsa Journal of Molecular Structure 513 (1-3), 109-115, 1999	42	1999
Energy-dependence of light-induced changes in g-As45S55 during recording the micro-Raman spectra RM Holomb, VM Mitsa, P Johansson, N Mateleshko, A Matis, M Veres	39	2005
Ab initio and Raman study of medium range ordering in GeSe2 glass R Holomb, V Mitsa, E Akalin, S Akyuz, M Sichka Journal of non-crystalline solids 373, 51-56, 2013	37	2013
New evidence of light-induced structural changes detected in As–S glasses by photon energy dependent Raman spectroscopy R Holomb, N Mateleshko, V Mitsa, P Johansson, A Matic, M Veres Journal of non-crystalline solids 352 (9-20), 1607-1611, 2006	31	2006
Ab initio calculations and the effect of atomic substitution in the Raman spectra of As(Sb,Bi)₂S₃ films O Kondrat, N Popovich, R Holomb, V Mitsa, O Petrachenkov, M Koós, ... physica status solidi c 7 (3‐4), 893-896, 2010	27	2010
Boson peak of AsxS1− x glasses and theoretical calculations of low frequencies clusters vibrations R Holomb, V Mitsa Solid state communications 129 (10), 655-659, 2004	24	2004
Non‐linear optical properties and structure of wide band gap non‐crystalline semiconductors V Mitsa, R Holomb, M Veres, A Marton, I Rosola, I Fekeshgazi, M Koós physica status solidi (c) 8 (9), 2696-2700, 2011	22	2011
Structural studies of technologically modificated GeS2 glasses and film N Mateleshko, V Mitsa, R Holomb Physica B: Condensed Matter 349 (1-4), 30-34, 2004	22	2004
Influence of transition film-substrate layers on optical properties of the multilayer structures YA Pervak, A Mitsa, I Holovach, IV Fekeshgazi Selected Papers from the International Conference on Optoelectronic …, 2001	21	2001
Coordination disordering in near-stoichiometric arsenic sulfide glass O Shpotyuk, S Kozyukhin, Y Shpotyuk, P Demchenko, V Mitsa, M Veres Journal of non-crystalline solids 402, 236-243, 2014	20	2014
Boson peak in low‐frequency Raman spectra of As_xS_100‐x glasses: nanocluster contribution R Holomb, V Mitsa, P Johansson, M Veres physica status solidi c 7 (3‐4), 885-888, 2010	19	2010
Localized states model of GeS2 glasses based on electronic states of GenSm clusters calculated by using TD-DFT method RM Holomb, VM Mitsa, P Johansson	19	2005
New ring-like models and ab initio DFT study of the medium-range structures, energy and electronic properties of GeSe₂ glass R Holomb, V Mitsa, S Akyuz, E Akalin Philosophical Magazine 93 (19), 2549-2562, 2013	18	2013
Coherent Light Photo-modification, Mass Transport Effect, and Surface Relief Formation in As_xS_100-x Nanolayers: Absorption Edge, XPS, and Raman … O Kondrat, R Holomb, A Csik, V Takáts, M Veres, V Mitsa Nanoscale Research Letters 12, 1-10, 2017	17	2017
Synchrotron radiation photoelectron spectroscopy studies of self-organization in As40Se60 nanolayers stored under ambient conditions and after laser irradiation O Kondrat, N Popovich, R Holomb, V Mitsa, V Lyamayev, N Tsud, V Cháb, ... Journal of non-crystalline solids 358 (21), 2910-2916, 2012	17	2012
Investigation of nanophase separation in Glassy As40Se60 using Raman scattering and AB initio calculations N Mateleshko, V Mitsa, M Veres, M Koos Chalcogenide Letters 1 (11), 139-144, 2004	17	2004

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