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Volodymyr Malyutenko
Volodymyr Malyutenko
Professor, Institute of Semiconductor Physics, Kiev, Ukraine
Verified email at isp.kiev.ua - Homepage
Title
Cited by
Cited by
Year
Current crowding effect on the ideality factor and efficiency droop in blue lateral InGaN/GaN light emitting diodes
VK Malyutenko, SS Bolgov, AD Podoltsev
Applied Physics Letters 97 (25), 2010
1222010
Current crowding in InAsSb light-emitting diodes
VK Malyutenko, OY Malyutenko, AD Podoltsev, IN Kucheryavaya, ...
Applied Physics Letters 79 (25), 4228-4230, 2001
672001
Negative luminescence of semiconductors
P Berdahl, V Malyutenko, T Morimoto
Infrared Physics 29 (2-4), 667-672, 1989
391989
Infrared dynamic scene simulating device based on light down-conversion
VK Malyutenko, KV Michailovskaya, OY Malyutenko, VV Bogatyrenko, ...
IEE Proceedings-Optoelectronics 150 (4), 391-394, 2003
362003
Negative luminescence in semiconductors: a retrospective view
VK Malyutenko
Physica E: Low-dimensional Systems and Nanostructures 20 (3-4), 553-557, 2004
342004
The effect of current crowding on the heat and light pattern in high-power AlGaAs light emitting diodes
AV Zinovchuk, OY Malyutenko, VK Malyutenko, AD Podoltsev, AA Vilisov
Journal of Applied Physics 104 (3), 2008
322008
Thermal emission of semiconductors: investigation and application
VK Malyutenko
Infrared physics 32, 291-302, 1991
321991
High temperature (T> 300K) light emitting diodes for 8–12 μm spectral range
V Malyutenko, A Melnik, O Malyutenko
Infrared physics & technology 41 (6), 373-378, 2000
302000
Room-temperature InAsSbP∕ InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection
VK Malyutenko, OY Malyutenko, AV Zinovchuk
Applied physics letters 89 (20), 2006
292006
Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
VK Malyutenko, OY Malyutenko, AV Zinovchuk, AL Zakheim, DA Zakheim, ...
Fifth International Conference on Solid State Lighting 5941, 319-325, 2005
262005
Bandgap dependence of current crowding effect in 3–5 µm InAsSb/InAs planar light emitting devices
VK Malyutenko, AV Zinovchuk, OY Malyutenko
Semiconductor Science and Technology 23 (8), 085004, 2008
242008
A new type of IR luminescence
VK Malyutenko, SS Bolgov, EI Yablonovsky
Infrared Physics 25 (1-2), 115-119, 1985
241985
Synthetic IR signature control using emissivity enhancement techniques
VK Malyutenko, OY Malyutenko, VV Bogatyrenko, SV Chyrchyk, ...
Technologies for Synthetic Environments: Hardware-in-the-Loop Testing IX …, 2004
232004
Luminescence of semiconductors under carrier deficiency conditions
SS Bolgov, VK Malyutenko, VI Pipa
SOVIET PHYSICS SEMICONDUCTORS-USSR 17 (2), 134-137, 1983
231983
Above-room-temperature 3–12μm Si emitting arrays
VK Malyutenko, SS Bolgov, OY Malyutenko
Applied physics letters 88 (21), 2006
222006
Semiconductor screen dynamic visible-to-infrared scene converter
VK Malyutenko, VV Bogatyrenko, OY Malyutenko, DR Snyder, AJ Huber, ...
Infrared Spaceborne Remote Sensing X 4818, 147-156, 2002
222002
Negative luminescence from InAsSbP-based diodes in the 4.0-to 4.3-um range
BA Matveev, M Aydaraliev, NV Zotova, SA Karandashev, MA Remennyi, ...
Testing, Reliability, and Applications of Optoelectronic Devices 4285, 109-117, 2001
222001
Surface recombination velocity in Si wafers by photoinduced thermal emission
V Malyutenko, S Chyrchyk
Applied physics letters 89 (5), 2006
212006
Mapping of current and heat flows in IR light-emitting devices and lasers
VK Malyutenko
Test and Measurement Applications of Optoelectronic Devices 4648, 43-47, 2002
212002
Research on electrical efficiency degradation influenced by current crowding in vertical blue InGaN-on-SiC light-emitting diodes
VK Malyutenko, SS Bolgov, AN Tykhonov
IEEE Photonics Technology Letters 24 (13), 1124-1126, 2012
202012
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