Підписатись
Christian Möller
Christian Möller
CiS Forschungsinstitut für Mikrosensorik GmbH
Підтверджена електронна адреса в cismst.de - Домашня сторінка
Назва
Посилання
Посилання
Рік
Light‐induced degradation in indium‐doped silicon
C Möller, K Lauer
physica status solidi (RRL)–Rapid Research Letters 7 (7), 461-464, 2013
522013
Influence of the feedstock purity on the solar cell efficiency
S Meyer, S Wahl, A Molchanov, K Neckermann, C Möller, K Lauer, ...
Solar energy materials and solar cells 130, 668-672, 2014
222014
Activation energies of the InSi‐Sii defect transitions obtained by carrier lifetime measurements
K Lauer, C Möller, C Teßmann, D Schulze, NV Abrosimov
physica status solidi c 14 (5), 1600033, 2017
162017
ASi-Sii-defect model of light-induced degradation in silicon
C Möller, K Lauer
Energy Procedia 55, 559-563, 2014
162014
Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon
C Möller, T Bartel, F Gibaja, K Lauer
Journal of Applied Physics 116 (2), 2014
142014
Calibration of excitonic photoluminescence to determine high aluminum concentrations in silicon
K Lauer, C Möller, D Schulze, T Bartel, F Kirscht
physica status solidi (RRL)–Rapid Research Letters 7 (4), 265-267, 2013
132013
Dynamics of iron-acceptor-pair formation in co-doped silicon
T Bartel, F Gibaja, O Graf, D Gross, M Kaes, M Heuer, F Kirscht, C Möller, ...
Applied Physics Letters 103 (20), 2013
122013
Discussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon
K Lauer, C Möller, D Schulze, C Ahrens, J Vanhellemont
Solid State Phenomena 242, 90-95, 2016
92016
Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect
K Lauer, C Möller, D Schulze, C Ahrens
AIP Advances 5 (1), 2015
92015
Determination of activation energy of the iron acceptor pair association and dissociation reaction
K Lauer, C Möller, D Debbih, M Auge, D Schulze
Solid State Phenomena 242, 230-235, 2016
82016
Local detection of deep carrier traps in the pn-junction of silicon solar cells
T Mchedlidze, L Scheffler, J Weber, M Herms, J Neusel, V Osinniy, ...
Applied Physics Letters 103 (1), 2013
72013
Comparison of incentive models for grid-supporting flexibility usage of private charging infrastructure
C Moeller, K Kotthaus, M Zdrallek, F Schweiger
ETG congress 2021, 1-6, 2021
62021
Low-temperature FTIR investigation of aluminum doped solar-grade silicon
K Lauer, C Möller, T Bartel, F Kirscht
Energy Procedia 55, 545-551, 2014
62014
Impact of a p-type solar cell process on the electrical quality of Czochralski silicon
K Lauer, C Möller, K Neckermann, M Blech, M Herms, T Mchedlidze, ...
Energy Procedia 38, 589-596, 2013
52013
Evolution of iron-containing defects during processing of Si solar cells
T Mchedlidze, C Möller, K Lauer, J Weber
Journal of Applied Physics 116 (24), 2014
42014
Impact of different electric vehicle charging models on distribution grid planning
T Müller, SA Ali, M Becker, C Möller, M Zdrallek, E Boden, C Knoll
IET Digital Library, 2021
32021
Tiny incident light angle sensor
D Mitrenga, M Schaedel, S Voellmeke, KD Preuss, C Moeller
MikroSystemTechnik 2017; Congress, 1-4, 2017
22017
On the trade-off between industrially feasible silicon surface preconditioning prior to interface passivation and iron contaminant removal effectiveness
A Laades, U Stürzebecher, HP Sperlich, C Möller, K Lauer, A Lawerenz
Solid State Phenomena 205, 47-52, 2014
22014
Windmill-like structure in Cz-Si
M Herms, V Osinniy, M Kirpo, F Dreckschmidt, J Neusel, O Gybin, ...
Energy Procedia 38, 80-85, 2013
22013
Charge carrier lifetime shift induced by temperature variation during a MWPCD measurement
C Möller, K Lauer
Energy Procedia 38, 153-160, 2013
22013
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Статті 1–20