| Tin doping of silicon for controlling oxygen precipitation and radiation hardness C Claeys, E Simoen, VB Neimash, A Kraitchinskii, M Kras’ko, O Puzenko, ... Journal of The Electrochemical Society 148 (12), G738, 2001 | 54 | 2001 |
| Tin induced a-Si crystallization in thin films of Si-Sn alloys V Neimash, V Poroshin, P Shepeliavyi, V Yukhymchuk, V Melnyk, ... Journal of Applied Physics 114 (21), 2013 | 47 | 2013 |
| Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon E Simoen, C Claeys, VB Neimash, A Kraitchinskii, N Krasko, O Puzenko, ... Applied Physics Letters 76 (20), 2838-2840, 2000 | 36 | 2000 |
| The effect of Sn impurity on the optical and structural properties of thin silicon films VV Voitovych, VB Neimash, NN Krasko, AG Kolosiuk, VY Povarchuk, ... Semiconductors 45, 1281-1285, 2011 | 33 | 2011 |
| Influence of tin impurities on the generation and annealing of thermal oxygen donors in Czochralski silicon at 450 C VB Neimash, A Kraitchinskii, M Kras' ko, O Puzenko, C Claeys, E Simoen, ... Journal of the Electrochemical Society 147 (7), 2727, 2000 | 30 | 2000 |
| Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities ML David, E Simoen, C Claeys, V Neimash, M Kras’ko, A Kraitchinskii, ... Journal of Physics: Condensed Matter 17 (22), S2255, 2005 | 29 | 2005 |
| Microstructure of thin Si–Sn composite films VB Neimash, VM Poroshin, AM Kabaldin, VO Yukhymchuk, ... Ukrainian journal of physics 58 (9), 865-865, 2013 | 27 | 2013 |
| Exciton-enhanced recombination in silicon at high concentrations of charge carriers AV Sachenko, AP Gorban, VP Kostylyov Semiconductor Physics Quantum Electronics & Optoelectronics, 2000 | 27 | 2000 |
| Self-sustained cyclic tin induced crystallization of amorphous silicon VB Neimash, AO Goushcha, PY Shepeliavyi, VO Yukhymchuk, VA Danko, ... Journal of Materials Research 30 (20), 3116-3124, 2015 | 24 | 2015 |
| Mechanism of tin-induced crystallization in amorphous silicon VB Neimash, AO Goushcha, PE Shepeliavyi, VO Yukhymchuk, ... Ukrainian journal of physics 59 (12), 1168-1168, 2014 | 24 | 2014 |
| Nanocrystals growth control during laser annealing of Sn:(α-Si) composites V Neimash, P Shepelyavyi, G Dovbeshko, AO Goushcha, M Isaiev, ... Journal of Nanomaterials 2016, 2016 | 19 | 2016 |
| DLTS Studies of high‐temperature electron irradiated Cz n‐Si V Neimash, M Kras' ko, A Kraitchinskii, V Voytovych, V Tishchenko, ... physica status solidi (a) 201 (3), 509-516, 2004 | 17 | 2004 |
| A protective role of HSP90 chaperone in gamma-irradiated Arabidopsis thaliana seeds L Kozeko, O Talalaiev, V Neimash, V Povarchuk Life sciences in space research 6, 51-58, 2015 | 16 | 2015 |
| Formation of radiation-induced defects in n-Si with lead and carbon impurities VB Neimash, VV Voitovych, MM Kras' ko, AM Kraitchinskii, OM Kabaldin, ... Ukrayins' kij Fyizichnij Zhurnal (Kiev) 50 (11), 1273-1277, 2005 | 13 | 2005 |
| Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon E Simoen, JM Rafí, C Claeys, V Neimash, A Kraitchinskii, M Kras' ko, ... Japanese journal of applied physics 42 (12R), 7184, 2003 | 13 | 2003 |
| FORMATION OF DEFECTS AS A RESULT OF ELECTRON-IRRADIATION OF TIN-DOPED P-TYPE SILICON VB Neimash, MG Sosnin, BM Turovskii, VI Shakhovtsov, VL Shindich SOVIET PHYSICS SEMICONDUCTORS-USSR 16 (5), 577-579, 1982 | 13 | 1982 |
| Influence of doping by the isovalent lead impurity on the parameters of n-silicon VB Neimash, VV Voitovych, AM Kraitchinskii, LI Shpinar, MM Kras' ko, ... Ukr. J. Phys 50 (5), 492-496, 2005 | 12 | 2005 |
| Role of laser power, wavelength, and pulse duration in laser assisted tin-induced crystallization of amorphous silicon VB Neimash, AO Goushcha, LL Fedorenko, PY Shepelyavyi, VV Strelchuk, ... Journal of Nanomaterials 2018, 1-11, 2018 | 9 | 2018 |
| Mechanical and thermal characteristics of irradiation cross-linked hydrogels O Nadtoka, N Kutsevol, A Onanko, V Neimash Nanochemistry, Biotechnology, Nanomaterials, and Their Applications …, 2018 | 7 | 2018 |
| On the effect of lead on irradiation induced defects in silicon ML David, E Simoen, C Claeys, VB Neimash, M Kras' ko, A Kraitchinskii, ... Solid State Phenomena 108, 373-378, 2005 | 7 | 2005 |
