| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 191 | 2017 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 162 | 2019 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018 | 128 | 2018 |
| High performance Ge0. 89Sn0. 11 photodiodes for low-cost shortwave infrared imaging H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ... Journal of Applied Physics 124 (1), 2018 | 65 | 2018 |
| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018 | 56 | 2018 |
| Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ... Optics express 22 (10), 11680-11689, 2014 | 35 | 2014 |
| UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019 | 34 | 2019 |
| Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ... AIP Advances 8 (2), 2018 | 27 | 2018 |
| MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 27 | 2013 |
| Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy PC Grant, D Fan, A Mosleh, SQ Yu, VG Dorogan, ME Hawkridge, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 24 | 2014 |
| Crystalline GeSn growth by plasma enhanced chemical vapor deposition W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ... Optical Materials Express 8 (10), 3220-3229, 2018 | 23 | 2018 |
| SiyGe1− x− ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ... Journal of Vacuum Science & Technology B 34 (1), 2016 | 19 | 2016 |
| Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices RA Carrasco, CP Morath, PC Grant, G Ariyawansa, CA Stephenson, ... Journal of Applied Physics 129 (18), 2021 | 18 | 2021 |
| Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ... Nanotechnology 29 (46), 465201, 2018 | 18 | 2018 |
| Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ... Journal of Electronic Materials 45, 2051-2058, 2016 | 18 | 2016 |
| Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ... Applied Surface Science 481, 246-254, 2019 | 15 | 2019 |
| Comparison study of the low temperature growth of dilute GeSn and Ge PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ... Journal of Vacuum Science & Technology B 35 (6), 2017 | 15 | 2017 |
| ACS Photonics 5, 827 (2018) J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... | 14 | |
| Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ... ECS Transactions 69 (5), 279, 2015 | 13 | 2015 |
| Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics G Abernathy, Y Zhou, S Ojo, B Alharthi, PC Grant, W Du, J Margetis, ... Journal of Applied Physics 129 (9), 2021 | 12 | 2021 |
