Perry Grant
Perry Grant
Підтверджена електронна адреса в us.af.mil
Назва
Посилання
Посилання
Рік
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1002017
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 1-11, 2018
512018
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures
D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
292013
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ...
Optics express 22 (10), 11680-11689, 2014
242014
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ...
Applied Physics Letters 113 (22), 221104, 2018
232018
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
222019
High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ...
Journal of Applied Physics 124 (1), 013101, 2018
222018
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 025104, 2018
152018
Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy
PC Grant, D Fan, A Mosleh, SQ Yu, VG Dorogan, ME Hawkridge, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
152014
SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system
A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
132016
Comparison study of the low temperature growth of dilute GeSn and Ge
PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
112017
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing
A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ...
Journal of Electronic Materials 45 (4), 2051-2058, 2016
102016
Heteroepitaxial growth of germanium-on-silicon using ultrahigh-vacuum chemical vapor deposition with RF plasma enhancement
B Alharthi, JM Grant, W Dou, PC Grant, A Mosleh, W Du, M Mortazavi, B Li, ...
Journal of Electronic Materials 47 (8), 4561-4570, 2018
92018
Enhancement of material quality of (Si) GeSn films grown by SnCl4 precursor
A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ...
ECS Transactions 69 (5), 279, 2015
92015
UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices
PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ...
Optical Materials Express 9 (8), 3277-3291, 2019
72019
Crystalline GeSn growth by plasma enhanced chemical vapor deposition
W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ...
Optical Materials Express 8 (10), 3220-3229, 2018
72018
Analysis of Gamma Rays and Cosmic Muons with a Single Detector
AG Bachri, PC Grant, A Goldschmidt
arXiv preprint arXiv:1107.4432, 2011
72011
ACS Photonics 5, 827 (2018)
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
6
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ...
Nanotechnology 29 (46), 465201, 2018
52018
CMOS compatible growth of high quality Ge, SiGe and SiGeSn for photonic device applications
MA Alher, A Mosleh, L Cousar, W Dou, P Grant, SA Ghetmiri, S Al-Kabi, ...
ECS Transactions 69 (5), 269, 2015
52015
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