| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 67 | 2017 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 1-11, 2018 | 27 | 2018 |
| MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013 | 25 | 2013 |
| Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ... Optics express 22 (10), 11680-11689, 2014 | 18 | 2014 |
| Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy PC Grant, D Fan, A Mosleh, SQ Yu, VG Dorogan, ME Hawkridge, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 14 | 2014 |
| Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ... AIP Advances 8 (2), 025104, 2018 | 12 | 2018 |
| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 221104, 2018 | 11 | 2018 |
| SiyGe1−x−ySnx films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system A Mosleh, M Alher, W Du, LC Cousar, SA Ghetmiri, S Al-Kabi, W Dou, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016 | 11 | 2016 |
| High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging H Tran, T Pham, W Du, Y Zhang, PC Grant, JM Grant, G Sun, RA Soref, ... Journal of Applied Physics 124 (1), 013101, 2018 | 8 | 2018 |
| Comparison study of the low temperature growth of dilute GeSn and Ge PC Grant, W Dou, B Alharthi, JM Grant, A Mosleh, W Du, B Li, M Mortazavi, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 8 | 2017 |
| Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing A Mosleh, M Alher, LC Cousar, W Du, SA Ghetmiri, S Al-Kabi, W Dou, ... Journal of Electronic Materials 45 (4), 2051-2058, 2016 | 8 | 2016 |
| Enhancement of Material Quality of (Si) GeSn Films Grown by SnCl4 Precursor A Mosleh, MA Alher, L Cousar, H Abusafe, W Dou, P Grant, S Al-Kabi, ... ECS Transactions 69 (5), 279-286, 2015 | 7 | 2015 |
| Analysis of Gamma Rays and Cosmic Muons with a Single Detector AG Bachri, PC Grant, A Goldschmidt arXiv preprint arXiv:1107.4432, 2011 | 5 | 2011 |
| Crystalline GeSn growth by plasma enhanced chemical vapor deposition W Dou, B Alharthi, PC Grant, JM Grant, A Mosleh, H Tran, W Du, ... Optical Materials Express 8 (10), 3220-3229, 2018 | 4 | 2018 |
| CMOS compatible growth of high quality Ge, SiGe and SiGeSn for photonic device applications MA Alher, A Mosleh, L Cousar, W Dou, P Grant, SA Ghetmiri, S Al-Kabi, ... ECS Transactions 69 (5), 269-278, 2015 | 4 | 2015 |
| Heteroepitaxial growth of germanium-on-silicon using ultrahigh-vacuum chemical vapor deposition with RF plasma enhancement B Alharthi, JM Grant, W Dou, PC Grant, A Mosleh, W Du, M Mortazavi, B Li, ... Journal of Electronic Materials 47 (8), 4561-4570, 2018 | 3 | 2018 |
| UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019 | 2 | 2019 |
| Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications B Alharthi, W Dou, PC Grant, JM Grant, T Morgan, A Mosleh, W Du, B Li, ... Applied Surface Science 481, 246-254, 2019 | 2 | 2019 |
| Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ... Nanotechnology 29 (46), 465201, 2018 | 2 | 2018 |
| Mechanism of periodic height variations along self-aligned VLS-grown planar nanostructures JA Steele, J Horvat, RA Lewis, M Henini, D Fan, YI Mazur, VG Dorogan, ... Nanoscale 7 (48), 20442-20450, 2015 | 2 | 2015 |
