Victor Bratus
Victor Bratus
leading researcher, V. Lashkaryov Institute of Semiconductor Physics NASU
Verified email at
Cited by
Cited by
The carbon⟨ 100⟩ split interstitial in SiC
TT Petrenko, TL Petrenko, VY Bratus
Journal of Physics: Condensed Matter 14 (47), 12433, 2002
’, AA Konchits, PLF Hemment, T. Komoda, Optical and electron paramagnetic resonance study of lightemitting Si+ ion implanted silicon dioxide layers
MY Valakh, VA Yukhimchuk, VY Bratus
J. Appl. Phys 85 (1), 168-173, 1999
Structural transformations and silicon nanocrystallite formation in SiO x films
VY Bratus, VA Yukhimchuk, LI Berezhinsky, MY Valakh, IP Vorona, ...
Semiconductors 35 (7), 821-826, 2001
Positively charged carbon vacancy in three inequivalent lattice sites of : Combined EPR and density functional theory study
VY Bratus, TT Petrenko, SM Okulov, TL Petrenko
Physical Review B 71 (12), 125202, 2005
’, VA Yukhimchuk, LI Berezhinsky, M. Ya. Valakh, IP Vorona, IZ Indutnyi, TT Petrenko, PE Shepeliavyi, and IB Yanchuk
VY Bratus
Semiconductors 35, 763, 2001
Positively charged carbon vacancy in 6H–SiC: EPR study
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Physica B: Condensed Matter 308, 621-624, 2001
EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Materials Science Forum 353, 517-520, 2001
’, AA Bugai, VS Vikhnin, AA Klimov, VM Maksimenko, TL Petrenko, and VV Romanenko
NP Baran, VY Bratus
Phys. Solid State 35, 1544, 1993
A new spin one defect in cubic SiC
VY Bratus, RS Melnik, SM Okulov, VN Rodionov, BD Shanina, MI Smoliy
Physica B: Condensed Matter 404 (23-24), 4739-4741, 2009
Calculation of hyperfine parameters of positively charged carbon vacancy in SiC
TT Petrenko, TL Petrenko, VY Bratus, JL Monge
Physica B: Condensed Matter 308, 637-640, 2001
Spin-lattice relaxation of nitrogen jahn-teller center in diamond
IM Zaritskii, VY Bratus, VS Vikhnin, AS Vishnevskii, AA Konchits, ...
FIZIKA TVERDOGO TELA 18 (11), 3226-3230, 1976
Vacancy-related defects in ion-beam and electron irradiated 6H–SiC
VY Bratus, TT Petrenko, HJ Von Bardeleben, EV Kalinina, A HallÚn
Applied surface science 184 (1-4), 229-236, 2001
Optical and electron paramagnetic resonance study of light-emitting ion implanted silicon dioxide layers
MY Valakh, VA Yukhimchuk, VY Bratus’, AA Konchits, PLF Hemment, ...
Journal of applied physics 85 (1), 168-173, 1999
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
VY Bratus, MY Valakh, IP Vorona, TT Petrenko, VA Yukhimchuk, ...
Journal of luminescence 80 (1-4), 269-273, 1998
EPR and ENDOR study of the center in porous silicon
VY Bratus, SS Ishchenko, SM Okulov, IP Vorona, HJ Von Bardeleben, ...
Physical Review B 50 (20), 15449, 1994
Functionalization of 2D macroporous silicon under the high-pressure oxidation
L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ...
Applied Surface Science 434, 142-147, 2018
Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
EV Kalinina, AS Zubrilov, NI Kuznetsov, IP Nikitina, AS Tregubova, ...
Materials Science Forum 338, 497-500, 2000
Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment
VA Dan'ko, VY Bratus, IZ Indutnyi, IP Lisovskyy, SO Zlobin, ...
Semiconductor physics quantum electronics & optoelectronics, 413-417, 2010
Electron paramagnetic resonance and electron‐nuclear double resonance of nonequivalent Yb3+ centers in stoichiometric lithium niobate
G Malovichko, V Bratus1, V Grachev, E Kokanyan
physica status solidi (b) 246 (1), 215-225, 2009
Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis
DI Bletskan, VY Bratus, AR Luk’yanchuk, VT Maslyuk, OA Parlag
Technical Physics Letters 34 (7), 612-614, 2008
The system can't perform the operation now. Try again later.
Articles 1–20