Victor Bratus
Victor Bratus
leading researcher, V. Lashkaryov Institute of Semiconductor Physics NASU
Подтвержден адрес электронной почты в домене isp.kiev.ua
Название
Процитировано
Процитировано
Год
The carbon⟨ 100⟩ split interstitial in SiC
TT Petrenko, TL Petrenko, VY Bratus
Journal of Physics: Condensed Matter 14 (47), 12433, 2002
592002
’, AA Konchits, PLF Hemment, T. Komoda, Optical and electron paramagnetic resonance study of lightemitting Si+ ion implanted silicon dioxide layers
MY Valakh, VA Yukhimchuk, VY Bratus
J. Appl. Phys 85 (1), 168-173, 1999
481999
Structural transformations and silicon nanocrystallite formation in SiO x films
VY Bratus, VA Yukhimchuk, LI Berezhinsky, MY Valakh, IP Vorona, ...
Semiconductors 35 (7), 821-826, 2001
362001
Positively charged carbon vacancy in three inequivalent lattice sites of : Combined EPR and density functional theory study
VY Bratus, TT Petrenko, SM Okulov, TL Petrenko
Physical Review B 71 (12), 125202, 2005
332005
’, VA Yukhimchuk, LI Berezhinsky, M. Ya. Valakh, IP Vorona, IZ Indutnyi, TT Petrenko, PE Shepeliavyi, and IB Yanchuk
VY Bratus
Semiconductors 35, 763, 2001
302001
Positively charged carbon vacancy in 6H–SiC: EPR study
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Physica B: Condensed Matter 308, 621-624, 2001
272001
EPR study of carbon vacancy-related defects in electron-irradiated 6H-SiC
VY Bratus, IN Makeeva, SM Okulov, TL Petrenko, TT Petrenko, ...
Materials Science Forum 353, 517-520, 2001
202001
’, AA Bugai, VS Vikhnin, AA Klimov, VM Maksimenko, TL Petrenko, and VV Romanenko
NP Baran, VY Bratus
Phys. Solid State 35, 1544, 1993
201993
Calculation of hyperfine parameters of positively charged carbon vacancy in SiC
TT Petrenko, TL Petrenko, VY Bratus, JL Monge
Physica B: Condensed Matter 308, 637-640, 2001
192001
A new spin one defect in cubic SiC
VY Bratus, RS Melnik, SM Okulov, VN Rodionov, BD Shanina, MI Smoliy
Physica B: Condensed Matter 404 (23-24), 4739-4741, 2009
182009
Spin-lattice relaxation of nitrogen jahn-teller center in diamond
IM Zaritskii, VY Bratus, VS Vikhnin, AS Vishnevskii, AA Konchits, ...
FIZIKA TVERDOGO TELA 18 (11), 3226-3230, 1976
171976
Optical and electron paramagnetic resonance study of light-emitting ion implanted silicon dioxide layers
MY Valakh, VA Yukhimchuk, VY Bratus’, AA Konchits, PLF Hemment, ...
Journal of applied physics 85 (1), 168-173, 1999
131999
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
VY Bratus, MY Valakh, IP Vorona, TT Petrenko, VA Yukhimchuk, ...
Journal of luminescence 80 (1-4), 269-273, 1998
131998
EPR and ENDOR study of the center in porous silicon
VY Bratus, SS Ishchenko, SM Okulov, IP Vorona, HJ Von Bardeleben, ...
Physical Review B 50 (20), 15449, 1994
131994
Vacancy-related defects in ion-beam and electron irradiated 6H–SiC
VY Bratus, TT Petrenko, HJ Von Bardeleben, EV Kalinina, A Hallén
Applied surface science 184 (1-4), 229-236, 2001
122001
Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment
VA Dan'ko, VY Bratus, IZ Indutnyi, IP Lisovskyy, SO Zlobin, ...
Semiconductor physics quantum electronics & optoelectronics, 413-417, 2010
112010
Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
EV Kalinina, AS Zubrilov, NI Kuznetsov, IP Nikitina, AS Tregubova, ...
Materials Science Forum 338, 497-500, 2000
112000
Functionalization of 2D macroporous silicon under the high-pressure oxidation
L Karachevtseva, M Kartel, V Kladko, O Gudymenko, W Bo, V Bratus, ...
Applied Surface Science 434, 142-147, 2018
102018
Determining residual impurities in sapphire by means of electron paramagnetic resonance and nuclear activation analysis
DI Bletskan, VY Bratus, AR Luk’yanchuk, VT Maslyuk, OA Parlag
Technical Physics Letters 34 (7), 612-614, 2008
92008
Material quality improvements for high voltage 4H-SiC diodes
E Kalinina, V Kossov, A Shchukarev, V Bratus, G Pensl, S Rendakova, ...
Materials Science and Engineering: B 80 (1-3), 337-341, 2001
92001
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Статьи 1–20