Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure HJ Kang, N Choi, SM Joe, JH Seo, E Choi, SK Park, BG Park, JH Lee
2015 Symposium on VLSI Technology (VLSI Technology), T182-T183, 2015
57 2015 Diode-type NAND flash memory cell string having super-steep switching slope based on positive feedback SM Joe, HJ Kang, N Choi, M Kang, BG Park, JH Lee
IEEE Transactions on Electron Devices 63 (4), 1533-1538, 2016
25 2016 Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure MK Jeong, SM Joe, BS Jo, HJ Kang, JH Bae, KR Han, E Choi, G Cho, ...
2012 International Electron Devices Meeting, 9.3. 1-9.3. 4, 2012
23 2012 Effect of traps on transient bit-line current behavior in word-line stacked NAND flash memory with poly-Si body HJ Kang, MK Jeong, SM Joe, JH Seo, SK Park, SH Jin, BG Park, JH Lee
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
19 2014 Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design HJ Kang, N Choi, DH Lee, T Lee, S Chung, JH Bae, BG Park, JH Lee
2018 IEEE Symposium on VLSI Technology, 201-202, 2018
17 2018 Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells N Choi, HJ Kang, JH Bae, BG Park, JH Lee
IEEE Electron Device Letters 40 (5), 702-705, 2019
10 2019 Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells HN Yoo, B Choi, JW Back, HJ Kang, E Kwon, S Chung, JH Bae, BG Park, ...
IEEE Electron Device Letters 42 (8), 1148-1151, 2021
9 2021 Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- Method MK Jeong, HJ Kang, SM Joe, SK Park, BG Park, JH Lee
IEEE Electron Device Letters 36 (6), 561-563, 2015
6 2015 Characterization of random telegraph noise generated by process-and cycling-stress-induced traps in 26 nm NAND flash memory BS Jo, HJ Kang, SM Joe, MK Jeong, KR Han, SK Park, BG Park, JH Lee
Japanese Journal of Applied Physics 52 (4S), 04CA07, 2013
5 2013 Bi-Directional Long Short-Term Memory Neural Network Modeling of Data Retention Characterization in 3-D Triple-Level Cell NAND Flash Memory H Jang, C Park, K Nam, H Yun, K Cho, JS Yoon, HC Choi, HJ Kang, ...
IEEE Transactions on Electron Devices, 2022
4 2022 First demonstration of diode-type 3-D NAND flash memory string having super-steep switching slope N Choi, HJ Kang, S Chung, SH Bae, BG Park, JH Lee
2017 Symposium on VLSI Technology, T204-T205, 2017
4 2017 A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge KD Kim, MK Jeong, SM Cho, HJ Kang, BJ Jun, JB Kim, KS Choi, SY Cha, ...
2013 Symposium on VLSI Technology, T44-T45, 2013
4 2013 A new read method suppressing effect of random telegraph noise in NAND flash memory by using hysteretic characteristic MK Jeong, SM Joe, HJ Kang, KR Han, G Cho, SK Park, BG Park, JH Lee
2013 Symposium on VLSI Technology, T154-T155, 2013
4 2013 Analysis of Random Telegraph Noise Characteristics with Two Different Cell States in 3-D NAND Flash Memory N Choi, HJ Kang, JH Lee
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19 (2), 153-157, 2019
3 2019 Reconfigurable Cell String Having FET and Super-Steep Switching Diode Operation in 3D NAND Flash Memory N Choi, HJ Kang, SM Joe, BG Park, JH Lee
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018
3 2018 Characterization of reliability in 3-D NAND flash memory JH Lee, SM Joe, HJ Kang
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
3 2014 Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method K Nam, C Park, JS Yoon, H Yun, H Jang, K Cho, HJ Kang, MS Park, J Sim, ...
Nanomaterials 12 (11), 1808, 2022
2 2022 Analysis of clockwise and counter-clockwise hysteresis characteristics in 3-D NAND flash memory cells HJ Kang, N Choi, JH Bae, BG Park, JH Lee
IEEE Electron Device Letters 38 (7), 867-870, 2017
2 2017 Characterization of random telegraph noise generated in the space region in NAND flash memory strings HJ Kang, MK Jeong, SM Joe, BG Park, JH Lee
Semiconductor Science and Technology 29 (12), 125001, 2014
2 2014 Extraction of Interface Trap Density in the Region Between Adjacent Wordlines in NAND Flash Memory Strings HJ Kang, SH Bae, MK Jeong, SM Joe, BG Park, JH Lee
IEEE Electron Device Letters 36 (1), 53-55, 2014
1 2014